ENGLISH

Silicon Quantum Integrated Circuits: Silicon-Germanium Heterostructure Devices: Basics and Realisations

By Prof. Erich Kasper , Prof. D.J. Paul (auth.)

Book information

Publisher
Springer-Verlag Berlin Heidelberg
Year
2005
ISBN
978-3-540-22050-3, 978-3-540-26382-1
DOI
10.1007/b137494
Language
english
Format
PDF
Filesize
7 MB (7211034 bytes)
Series
NanoScience and Technology
Edition
1
Pages
364\366
Orientation
yes
Scanned
yes
Time added
2013-08-01 04:00:00
InstrumentationOptical and Electronic Materials; Condensed Matter

Description

Quantum size effects are becoming increasingly important in microelectronics as the dimensions of the structures shrinks laterally towards 100 nm and vertically towards 10 nm. Advanced device concepts will exploit these effects for integrated circuits with novel or improved properties. Keeping in mind the trend towards systems on chip, this book deals with silicon-based quantum devices and focuses on room temperature operation. The basic physical principles, materials, technological aspects and fundamental device operation are discussed in an interdisciplinary manner. It is shown that silicon-germanium (SiGe) heterostructure devices will play a key role in realizing silicon-based quantum electronics.

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