ENGLISH

Metal Impurities in Silicon-Device Fabrication

By Dr. Klaus Graff (auth.)

Book information

Publisher
Springer Berlin Heidelberg
Year
1995
ISBN
978-3-642-97595-0, 978-3-642-97593-6
DOI
10.1007/978-3-642-97593-6
Language
english
Format
PDF
Filesize
7 MB (6915649 bytes)
Series
Springer Series in Materials Science 24
Pages
IX, 216 pp. 47 figs.\227
Orientation
yes
Scanned
yes
Time added
2013-08-01 04:00:00
Instrumentation; Inorganic ChemistrySurfaces and InterfacesThin Films; Electronics and Microelectronics

Description

Metal Impurities in Silicon-Device Fabrication treats the transition-metal impurities generated during silicon sample and device fabrication. The different mechanisms responsible for contamination are discussed, and a survey given of their impact on device performance. The specific properties of main and rare impurities in silicon are examined, as well as the detection methods and requirements in modern technology. Finally, impurity gettering is studied along with modern techniques to determine gettering efficiency. In all of these subjects, reliable and up-to-date data are presented. The monograph provides a thorough review of the results of recent scientific investigations, as well as of the relevant data and properties of the various metal impurities in silicon.

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