ENGLISH

Emerging Non-Volatile Memories

By Orlando Auciello , Seungbum Hong , Dirk Wouters (eds.)

Book information

Publisher
Springer US
Year
2014
ISBN
978-1-4899-7536-2, 978-1-4899-7537-9
DOI
10.1007/978-1-4899-7537-9
Language
english
Format
PDF
Filesize
12 MB (12502415 bytes)
Edition
1
Pages
273\280
Time added
2015-02-17 02:00:00
Optical and Electronic Materials; Solid State Phys

Description

This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. EmergingNon-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory. This book also: Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others. Provides an overview of non-volatile memory fundamentals. Broadens readers’ understanding of future trends in non-volatile memories.

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