Physical properties of materials for engineers. Volume 3

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Content: Cover Title Page Copyright Page PREFACE Half Title Table of Contents Chapter 10: Physical Factors in Phase Formation 10.1. Interstitial Solid Solutions 10.1.1. Hägg's Rules for Interstitial Solid Solutions 10.2. Substitutional Solid Solutions 10.2.1. Size Factors 10.2.1.1. Goldschmidt Radii 10.2.1.2. Space Concept 10.2.1.3. Symmetry Concept 10.2.2. Electronegativity 10.2.3. Relative Valence Effect 10.2.3.1. Electron:Atomic Ratio 10.2.4. Lattice Type 10.3. Solvus Curves 10.4. Solidus Curves 10.5. Liquidus Curves 10.6. Intermediate Phases 10.6.1. Bonding Energy of Ionic Crystals10.6.2. Compressibility of Ionic Crystals 10.6.3. Ionic Solids in General 10.6.4. Ionic Lattice Types 10.6.5. Laves Phases 10.6.6. Electron Phases 10.6.6.1. Alpha Phases 10.6.6.2. Beta Phases 10.6.6.3. Gamma Phases 10.6.7. Covalently Bonded Phases 10.6.8. Mixed Bonding 10.6.9. Defect Structures 10.7. Engle-Brewer Relationships 10.7.1. Nontransition Elements 10.7.2. Binary Alloy Systems 10.7.3. Transition Elements 10.7.4. Magnetic Effects 10.7.5. Allotrophy 10.7.6. Noble Metals 10.7.7. Multicomponent Constitution Diagrams 10.7.8. Other Unresolved Questions10.8. Other Methods of Phase Determination 10.8.1. The Miedema Method 10.9. Problems 10.10. References Chapter 11: Semiconductor 11.1. Intrinsic Semiconductors 11.1.1. Intrinsic Conduction Mechanism 11.1.2. Electron Behavior and Effective Mass 11.1.3. The Hall Effect 11.2. Roles of Impurities (Extrinsic Semiconductors) 11.2.1. Generation, Recombination, and Trapping of Carriers 11.2.1.1. Surface Effects 11.3. Photoconduction 11.4. Metal-Metal Rectification 11.5. Metal-Semiconductor Rectification 11.6. P-N Junction Rectification 11.6.1. Breakdown11.7. Semiconductor Materials 11.8. Bulk Semiconductor Devices 11.8.1. Photoconductors 11.8.2. Spontaneous and Stimulated Electromagnetic Emission 11.8.2.1. Photoluminescence (Phosphorescence) 11.8.2.2. Stimulated Emission 11.8.3. Mechanical Devices 11.8.4. Temperature Measurement and Resistance Change 11.8.5. Resistors 11.8.6. Thermoelectric Devices 11.8.7. Hall-Effect Devices 11.9. Semiconductor Diode Devices 11.9.1. Semiconductor Diode Rectifiers 11.9.2. Avalanche and Tunnel Diodes 11.9.3. Photodetecting Junction Devices 11.9.4. Light-Emitting Diodes 11.9.5. Semiconductor Diode Lasers11.9.6. Parametric Diodes 11.9.6.1. Varactors 11.9.6.2. P-I-N Junctions 11.9.6.3. Schottky Diodes 11.9.6.4. IMPATT Diodes 11.10. Transistors 11.10.1. Bipolar Junction Devices 11.10.2. Junction Field-Effect Transistors 11.10.3. Metal-Oxide-Silicon FET (MOSFET) 11.11. Problems 11.12. References Chapter 12: Dielectric Properties 12.1. Capacitors-Static Fields 12.2. Polarization of Atoms and Molecules 12.3. Orientation Polarizability 12.4. The Lorentz Internal Field and the Debye Function 12.5. The Clausius-Mossotti and Onsager Equations