ENGLISH

Fowler-Nordheim Field Emission: Effects in Semiconductor Nanostructures

By Sitangshu Bhattacharya , Kamakhya Prasad Ghatak (auth.)

Book information

Publisher
Springer-Verlag Berlin Heidelberg
Year
2012
ISBN
3642204929, 9783642204920
DOI
10.1007/978-3-642-20493-7
ISSN
0171-1873
Google Books ID
hwvcixWM61sC
Language
english
Format
PDF
Filesize
3 MB (3392936 bytes)
Series
Springer Series in Solid-State Sciences 170
Edition
1
Pages
338\361
Library
Kolxo3
Orientation
yes
Scanned
no
Time added
2012-03-09 12:00:00
RF and Optical EngineeringSemiconductors;Optical and Electronic Materials;Na

Description

This monograph solely presents the Fowler-Nordheim field emission (FNFE) from semiconductors and their nanostructures. The materials considered are quantum confined non-linear optical, III-V, II-VI, Ge, Te, carbon nanotubes, PtSb2, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V, Bi2Te3, III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices under magnetic quantization and quantum wires of the aforementioned superlattices. The FNFE in opto-electronic materials and their quantum confined counterparts is studied in the presence of light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The importance of band gap measurements in opto-electronic materials in the presence of external fields is discussed from this perspective. This monograph contains 200 open research problems which form the very core and are useful for Ph. D students and researchers. The book can also serve as a basis for a graduate course on field emission from solids.

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