Nanoscale Devices: Physics, Modeling, and Their Application

Description

The primary aim of this book is to discuss various aspects of nanoscale device design and their applications including transport mechanism, modeling, and circuit applications. Provides a platform for modeling and analysis of state-of-the-art devices in nanoscale regime, reviews issues related to optimizing the sub-nanometer device performance and addresses simulation aspect and/or fabrication process of devices. Also, includes design problems at the end of each chapter. Section I: Nanoscale Transistors 1: Simulation of Nanoscale Transistors from Quantum and Multiphysics Perspective 2: Variability in Nanoscale Technology and EdDC MOS Transistor 3: Effect of Ground Plane and Strained Silicon on Nanoscale FET Devices Section II: Novel MOSFET Structures 4: U-Shaped Gate Trench Metal Oxide Semiconductor Field Effect Transistor: Structures and Characteristics 5: Operational Characteristics of Vertically Diffused Metal Oxide Semiconductor Field Effect Transistor 6: Modeling of Double-Gate MOSFETs Section III: Modeling of Tunnel FETs 7: TFETs for Analog Applications 8: Dual Metal–Double Gate Doping-Less TFET: Design and Investigations Section IV: Graphene and Carbon Nanotube Transistors and Applications 9: Modeling of Graphene Plasmonic Terahertz Devices 10: Analysis of CNTFET for SRAM Cell Design 11: Design of Ternary Logic Circuits Using CNFETs Section V: Modeling of Emerging Non-Silicon Transistors 12: Different Analytical Models for Organic Thin-Film Transistors: Overview and Outlook 13: A Fundamental Overview of High Electron Mobility Transistor and Its Applications Section VI: Emerging Nonvolatile Memory Devices and Applications 14: Spintronic-Based Memory and Logic Devices 15: Fundamentals, Modeling, and Application of Magnetic Tunnel Junctions 16: RRAM Devices: Underlying Physics, SPICE Modeling, and Circuit Applications 17: Evaluation of Nanoscale Memristor Device for Analog and Digital Application Index