ENGLISH

Nonlinear Transistor Model Parameter Extraction Techniques

By Matthias Rudolph , Christian Fager , David E. Root

Book information

Publisher
Cambridge University Press
Year
2011
ISBN
0521762103, 9780521762106
LCC
TK7871.9 .N66 2011
Open Library ID
OL25186165M
Language
english
Format
PDF
Filesize
14 MB (14186212 bytes)
Series
Cambridge RF and Microwave Engineering Series
Edition
1
Pages
368\368
Orientation
yes
Scanned
no
Time added
2012-02-04 16:00:00
Приборостроение;Полупроводниковые приборы;Транзист

Description

Achieve accurate and reliable parameter extraction using this complete survey of state-of-the-art techniques and methods. A team of experts from industry and academia provides you with insights into a range of key topics, including parasitics, intrinsic extraction, statistics, extraction uncertainty, nonlinear and DC parameters, self-heating and traps, noise, and package effects. Learn how similar approaches to parameter extraction can be applied to different technologies. A variety of real-world industrial examples and measurement results show you how the theories and methods presented can be used in practice. Whether you use transistor models for evaluation of device processing and you need to understand the methods behind the models you use, or you want to develop models for existing and new device types, this is your complete guide to parameter extraction.

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