ENGLISH

Fundamentals of Nanoscaled Field Effect Transistors

By Amit Chaudhry (auth.)

Book information

Publisher
Springer-Verlag New York
Year
2013
ISBN
978-1-4614-6821-9, 978-1-4614-6822-6
DOI
10.1007/978-1-4614-6822-6
Language
english
Format
PDF
Filesize
3 MB (3530646 bytes)
Edition
1
Pages
201\211
Orientation
yes
Scanned
yes
Time added
2013-08-01 04:00:00
Electronics and MicroelectronicsInstrumentation;Electronic Circuits and Devices;Ci

Description

Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.

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