ENGLISH

Semiconductor Devices

Book information

Publisher
Prentice Hall
Year
1997
ISBN
978-0-02-361938-0
Language
english
Format
PDF
Filesize
196 MB (204999403 bytes)
Pages
498\498
Topic
Technique\\Electronics
Time added
2017-08-14 15:46:28

Description

A mainstream, solid state book that represents a balance in orientation between a strong physics and a strong applications approach. This book has a unique chapter on the fabrication of devices; integrates a wealth of illustrations and pictorial representations; and contains an extensive discussion and analysis of the MOSFET because of its universal application in digital circuits. Ch. 1. Atomic Structure and Quantum Mechanics Ch. 2. Energy Bands and Current Carriers in Semiconductors Ch. 3. Intrinsic and Extrinsic Semiconductors Ch. 4. Carrier Processes: Drift, Diffusion and Generation-Recombination Ch. 5. The PN Junction Diode Ch. 6. Fabrication Technology Ch. 7. Limitations to Ideal Diode Theory Ch. 8. Bipolar Transistors I: Characteristics and First Order Model Ch. 9. Bipolar Transistors II: Limitations, Switching and Models Ch. 10. Junction Field-Effect Transistors Ch. 11. Metal-Semiconductor Junctions and Devices Ch. 12. Metal-Oxide-Silicon Systems Ch. 13. Metal-Oxide-Semiconductor Field-Effect Transistor Ch. 14. Optoelectronics App. A. Units App. B. Physical Constants and Factors App. C. The Density of States N(E) App. D. Einstein Relation App. E. Frequently Used Symbols Index [Source: http://trove.nla.gov.au/work/22871602?selectedversion=NBD13174915]

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