ENGLISH

Charge and Spin Transport in Disordered Graphene-Based Materials

By Dinh Van Tuan (auth.)

Book information

Publisher
Springer International Publishing
Year
2016
ISBN
978-3-319-25569-9, 978-3-319-25571-2
DOI
10.1007/978-3-319-25571-2
Language
english
Format
PDF
Filesize
9 MB (9303916 bytes)
Series
Springer Theses
Edition
1
Pages
XVI, 153\162
Time added
2015-11-25 16:51:03
Nanoscale Science and Technology; Optical and ElecThin Films

Description

This thesis presents an in-depth theoretical analysis of charge and spin transport properties in complex forms of disordered graphene. It relies on innovative real space computational methods of the time-dependent spreading of electronic wave packets. First a universal scaling law of the elastic mean free path versus the average grain size is predicted for polycrystalline morphologies, and charge mobilities of up to 300.000 cm2/V.s are determined for 1 micron grain size, while amorphous graphene membranes are shown to behave as Anderson insulators. An unprecedented spin relaxation mechanism, unique to graphene and driven by spin/pseudospin entanglement is then reported in the presence of weak spin-orbit interaction (gold ad-atom impurities) together with the prediction of a crossover from a quantum spin Hall Effect to spin Hall effect (for thallium ad-atoms), depending on the degree of surface ad-atom segregation and the resulting island diameter.

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