ENGLISH

Optical Absorption of Impurities and Defects in Semiconducting Crystals: Electronic Absorption of Deep Centres and Vibrational Spectra

By Bernard Pajot , Bernard Clerjaud (auth.)

Book information

Publisher
Springer-Verlag Berlin Heidelberg
Year
2013
ISBN
978-3-642-18017-0, 978-3-642-18018-7
DOI
10.1007/978-3-642-18018-7
Language
english
Format
PDF
Filesize
8 MB (8689641 bytes)
Series
Springer Series in Solid-State Sciences 169
Edition
1
Pages
512\531
Orientation
yes
Scanned
yes
Time added
2013-08-01 04:00:00
OptoelectronicsPlasmonics and Optical Devices;Optical and ElectroRF and Optical Engineering;Characterization and EvSolid State Physics;Optics

Description

This book outlines, with the help of several specific examples, the important role played by absorption spectroscopy in the investigation of deep-level centers introduced in semiconductors and insulators like diamond, silicon, germanium and gallium arsenide by high-energy irradiation, residual impurities, and defects produced during crystal growth. It also describes the crucial role played by vibrational spectroscopy to determine the atomic structure and symmetry of complexes associated with light impurities like hydrogen, carbon, nitrogen and oxygen, and as a tool for quantitative analysis of these elements in the materials.

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