ENGLISH

Microwave Active Devices and Circuits for Communication

Book information

Publisher
Springer
Year
2019
ISBN
978-981-13-3004-9
Language
english
Format
PDF
Filesize
17 MB (17314318 bytes)
Pages
695\695
Time added
2018-12-15 12:58:36

Description

Foreword......Page 3 Preface......Page 4 Contents......Page 6 1.1 Microwave Communications......Page 13 1.2 Microwave Active Circuits......Page 17 1.3 Microwave Active Devices......Page 20 1.4 Microwave Circuit Analysis and Measurements......Page 21 1.5 Book Outline......Page 22 References......Page 23 2.2 Basics of P-I-N Diode......Page 24 2.3 P-I-N Diode Characteristics......Page 25 2.4 Nonlinearity of P-I-N Diode......Page 30 2.5 Temperature Behaviour of P-I-N Diode......Page 31 2.6 Temperature-Invariant RF Resistance of P-I-N Diode......Page 33 References......Page 41 3.2 Basics of Schottky Diode......Page 43 3.3 Schottky Diode Characteristics......Page 46 3.4 Temperature Behaviour of Schottky Diodes......Page 49 3.5 Temperature Invariant RF Resistance......Page 51 References......Page 55 4.2 Step Recovery Diode......Page 56 4.2.1 Characteristic of SRD......Page 58 4.3 Tunnel Diodes......Page 60 4.3.1 Characteristic of Tunnel Diode......Page 61 4.4 Backward Diode......Page 63 4.5 Varactor Diode......Page 65 References......Page 66 5.1 Introduction......Page 68 5.2 Bipolar Junction Transistor (BJT)......Page 69 5.2.1 Frequency Limitation of BJT......Page 74 5.2.2 Temperature Behaviour of BJT......Page 78 5.3 Hetero-junction Bipolar Transistor (HBT)......Page 79 5.3.1 SiGe HBT......Page 82 5.3.3 GaN HBT......Page 83 References......Page 85 6.1 Introduction......Page 87 6.2 Metal–Semiconductor Field Effect Transistors......Page 89 6.3 Hetero-Structure Field Effect Transistors (HFETs)......Page 93 6.3.1 High-Electron-Mobility Transistors (HEMTs)......Page 95 6.3.2 Pseudo-morphic HEMTs (pHEMTs)......Page 98 6.4 Microwave GaN HEMTs......Page 100 6.5 Equivalent Circuit of Microwave FETs......Page 102 6.5.1 Transconductance Gain (gm)......Page 103 6.5.2 Output Conductance (1/rds)......Page 105 6.5.3 Gate–Source and Gate–Drain Capacitances (Cgs and Cgd)......Page 107 6.5.4 Charging Resistance (Ri)......Page 109 6.6 Maximum Frequency of Operation......Page 115 References......Page 116 7.1 Introduction......Page 119 7.2 Transmission Line Theory and Analysis......Page 120 7.3.1 Losses in Transmission Lines......Page 128 7.3.2 Coaxial Transmission Lines......Page 131 7.3.3 Waveguides......Page 135 7.3.4 Cut-Off Frequency and Guide Wavelength......Page 141 7.3.5 Planar Transmission Lines......Page 147 7.4 Transmission Line Elements......Page 155 7.5 Smith Chart Analysis......Page 157 7.6 Network Theory of Circuits and Transmission Lines......Page 166 7.6.1 S-Parameter Network Representation......Page 167 7.6.2 S-Parameters for Matched Reciprocal Lossless Networks......Page 173 7.6.3 ABCD Parameter for Network Representation......Page 182 7.6.4 Conversion in Between ABCD and S-Parameters......Page 185 7.7.1 Power Transfer from Source to a Load......Page 187 7.7.2 Power Transfer to and from a 2-Port Network......Page 189 References......Page 205 8.1 Introduction......Page 206 8.2 Switch Circuits Based on P-I-N Diode......Page 207 8.3 Series Switch Configuration......Page 209 8.4 Shunt Switch Configuration......Page 213 8.5.1 Series–Shunt Configuration......Page 216 8.5.2 TEE Configuration......Page 220 8.6 Compound Switch Analysis Using ABCD Parameter......Page 224 8.7 Switch Circuits Based on FETs......Page 226 8.8 Applications of RF/Microwave Switches......Page 228 References......Page 240 9.1 Introduction......Page 242 9.2 Diode-Based Attenuator Circuits......Page 243 9.3 Series- or Shunt-Connected Element......Page 244 9.4 Multiple Shunt-Connected Element......Page 247 9.5 Matched Attenuator Circuits......Page 250 9.5.1 TEE Attenuator......Page 251 9.5.2 π Attenuator......Page 255 9.5.3 Quadrature Hybrid Matched Attenuator......Page 258 9.6 Driver Circuit for P-I-N Diode Attenuators......Page 262 9.7 Effect of Nonideal Components in Driver Circuits......Page 266 9.8 Experimental Determination of VOPTM......Page 269 9.9 FET-Based Attenuators......Page 270 References......Page 284 10.2 Phase Shift and Time Delay......Page 286 10.3 Types of Phase Shifter......Page 288 10.4.1 Switched Transmission Line Phase Shifter......Page 290 10.4.2 Varactor Diode-Based Analog Phase Shifters......Page 292 10.4.3 Four-Quadrant Continuously Variable Phase Shifter......Page 294 10.4.4 Four-Quadrant Digital Phase Shifter......Page 299 10.5 Applications of RF/Microwave Phase Shifter......Page 300 References......Page 301 11.1 Introduction......Page 302 11.2 Amplitude Modulators......Page 303 11.3.1 Bi-Phase Modulators......Page 305 11.3.2 Bi-Phase-Balanced Modulators......Page 307 11.4 I–Q Vector Modulators......Page 309 11.6 QAM Modulators......Page 312 References......Page 313 12.1 Introduction......Page 314 12.2 Different Configurations......Page 315 12.3 Equalizer with Adjustable Amplitude Slope......Page 318 12.4 Equalizer with Adjustable Parabolic Gain Slope for Broadband MPM......Page 322 12.5 Equalizer with Adjustable Positive Gain Slopes for Solid-State Circuits......Page 323 12.7 Versatile Equalizer with Variable Gain Slope and Insertion Loss......Page 325 References......Page 338 13.1 Introduction......Page 339 13.2 Microwave Power......Page 340 13.3 Diode Detectors......Page 346 13.4 RMS Power (Average) Detector......Page 352 13.6 Applications......Page 353 References......Page 354 14.1 Introduction......Page 355 14.2 Types of Microwave Amplifiers......Page 357 14.2.1 Dynamic Range of Amplifier......Page 359 14.2.2 Spurious-Free Dynamic Range......Page 364 14.3 Stability of Microwave Amplifier......Page 369 14.4 Single-Stage Amplifier Design......Page 382 14.4.1 Amplifiers Using Unconditionally Stable Device......Page 383 14.4.2 Amplifier Using Conditionally Stable Device......Page 386 14.5.1 Amplifier with Specific Transducer Power Gain......Page 388 14.5.2 Amplifier with Specific Available Power Gain......Page 392 14.5.3 Amplifier with Specific Operating Power Gain......Page 400 14.6.1 Low Noise Amplifier (LNA) Design......Page 406 14.6.2 High-Gain Amplifier Design......Page 417 14.7 Large Signal Amplifiers......Page 426 14.7.1 Linear Power Amplifier......Page 430 14.7.2 Load-Pull Characterization Technique......Page 440 14.7.3 Amplifiers with Reduced Conduction Angle......Page 441 14.7.4 Nonlinear Power Amplifiers......Page 451 14.7.5 Class-F Power Amplifier......Page 457 14.8 FETs Output Power Capability......Page 465 14.8.1 Microwave Power Combing Techniques......Page 469 14.8.2 In-Phase Power Combiners......Page 470 14.8.3 Balanced Power Combining......Page 475 References......Page 482 15.1 Introduction......Page 485 15.2 Limiter Characteristics......Page 486 15.3 P-I-N Diode Limiters......Page 488 15.4 Schottky Diode Limiters......Page 493 15.5 Amplifier-Based Limiter......Page 498 15.6 Closed-Loop Limiter......Page 500 15.6.1 Temperature Behaviour of OLC System......Page 501 15.6.2 Temperature Compensation of OLC System......Page 502 15.7 Applications......Page 503 15.7.1 OLC for Out-of-Band Carrier Mitigation in Filters......Page 504 References......Page 505 16.1 Introduction......Page 506 16.2 Types of Distortion and Amplifier Nonlinearity......Page 507 16.3.1 Feedback Linearizers......Page 509 16.3.2 Feedforward Linearizers......Page 510 16.3.3 Predistortion Linearizers......Page 511 16.4 Implementation of Predistortion Linearizers......Page 512 16.4.1 Schottky Diode Predistortion Linearizers......Page 513 16.4.2 Linearizer with Vector Modulator Configuration......Page 518 16.4.3 Temperature Behaviour of Diode Linearizer......Page 522 16.4.4 Broadband Linearizers......Page 525 16.5 Digital Predistortion Linearizers......Page 528 References......Page 530 17.1 Introduction......Page 532 17.2 Principle of Multiplier Operation......Page 533 17.3.1 Schottky Diode Frequency Multiplier......Page 538 17.3.2 Varactor Diode Frequency Multiplier......Page 540 17.3.3 SRD Frequency Multiplier......Page 542 17.4 Transistor Multiplier......Page 545 17.5 Realization of FET Multipliers......Page 553 17.6 Balanced Frequency Multipliers......Page 555 17.6.1 Balanced Frequency Multipliers Using Diodes......Page 556 17.6.2 Balanced Frequency Multiplier Using Transistors......Page 557 References......Page 558 18.2 Working Principle of Frequency Mixers......Page 560 18.2.1 Image Frequency in Mixer......Page 563 18.2.2 Conversion Loss of Frequency Mixer......Page 565 18.2.3 Noise Performance of Frequency Mixer......Page 567 18.3 Single-Ended Mixers......Page 570 18.4.1 Single-Balanced Mixers......Page 575 18.4.2 Double-Balanced Mixers......Page 579 18.4.3 Image Rejection Mixers......Page 580 18.5 Subharmonic Mixers......Page 581 References......Page 585 19.1 Introduction......Page 587 19.2 Mobile Communication Systems......Page 588 19.2.1 Receiver Architecture for Mobile Communication......Page 589 19.2.2 Transmitter Architecture for Mobile Communication......Page 592 19.2.3 Transceiver for Mobile Communication......Page 593 19.3 Satellite Communication Systems......Page 597 19.4 Receiver......Page 610 19.4.1 Local Oscillator......Page 614 19.5.1 Driver Amplifier (DA)......Page 616 19.5.2 Travelling Wave Tube Amplifier (TWTA)......Page 620 19.5.3 Solid-State Power Amplifier (SSPA)......Page 622 19.6 Linearizer......Page 624 19.7 Microwave Power Module (MPM)......Page 626 19.8 Multiport Amplifier (MPA)......Page 627 References......Page 649 20.1 Multiple Choice Questions......Page 651 20.2 Answers of MCQs with Explanations......Page 682 Index......Page 693

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