ENGLISH

Operation and Modeling of the MOS Transistor

By Yannis Tsividis , Colin McAndrew

Book information

Publisher
Oxford University Press, USA
Year
2010
ISBN
0195170156, 9780195170153
LCC
TK7871.99.M44 T77 2010
Language
english
Format
DJVU
Filesize
10 MB (10927586 bytes)
Series
Oxford Series in Electrical and Computer Engineering
Edition
3
Pages
752\750
DPI
300
Time added
2013-03-23 17:28:57

Description

Operation and Modeling of the MOS Transistor has become a standard in academia and industry. Extensively revised and updated, the third edition of this highly acclaimed text provides a thorough treatment of the MOS transistor--the key element of modern microelectronic chips.New to this edition:* Energy bands and the energy barrier viewpoint are integrated into the discussion in a smooth, simple manner* Expanded discussion of small-dimension effects, including velocity saturation, drain-induced barrier lowering, ballistic operation, polysilicon depletion, quantum effects, gate tunneling current, and gate-induced drain leakage* Expanded discussion of small-signal modeling, including gate and substrate current modeling and flicker noise* New chapter on substrate nonuniformity and structural effects, discussing transversal and lateral (halo) doping nonuniformity, stress and well proximity effects, and statistical variability* A completely re-written chapter on modeling for circuit simulation, covering the considerations and pitfalls in the development of models for computer-aided design* Extensively updated bibliography* An accompanying website includes additional details not covered in the text, as well as model computer code

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