Millimeter Aave GaN Power Amplifier Design

Description

For engineers starting to work with millimeter waves, Camargo explains important methodologies for designing millimeter integrated circuits. He focuses on gallium nitride (GaN) technology, which currently dominates power millimeter-wave applications due to its capabilities for high power, gain, and efficiency, but he says the material should be applicable to any field effect-based technology. He covers models for GaN technology, field-effect transistor amplifiers, impedance matching, power amplifiers, and state-of-the-art millimeter integrated circuit amplifiers. Annotation ©2022 Ringgold, Inc., Portland, OR (protoview.com) Millimeter-Wave GaN Power Amplifier Design Contents Preface CHAPTER 1 Introduction 1.1 Millimeter-WaveGaN 1.2 State of the Art 1.3 Applications 1.4 Cell Phone Connectivity 1.5 GaN-BasedPower Amplifiers References CHAPTER 2 Models for GaN Technology 2.1 Passive Components 2.1.1 Microstrip Line 2.1.2 Series Capacitors 2.1.3 Shunt Capacitors 2.1.4 Interdigital Capacitors 2.1.5 Thin-FilmResistors 2.2 The GaN HEMT 2.3 DC Parameter Anomalie 2.3.1 Current Collapse 2.3.2 Gate and Drain Lag 2.3.3 Poor Pinch-Off 2.3.4 Gate Leakage 2.4 Temperature Dependence 2.5 Unit Cell 2.6 Linear GaN HEMT Model 2.7 Source and Load Modeling 2.7.1 Modeling for Gain 2.7.2 Modeling for Power 2.7.3 Source/Load as Resonant Networks 2.7.4 Drain Load Impedance 2.7.5 Gate Source Impedance 2.8 Unit Cell Gain and Stability 2.8.1 Stabilization of Unit Cells 2.8.2 Source Inductor 2.8.3 Source Inductor and Gate Resistor 2.8.4 Resistor with Shunt Inductor 2.9 Nonlinear GaN HEMT Model 2.10 EEHEMT Model Validation 2.10.1 Linear Performance 2.10.2 Prematched Linear Performance 2.10.3 Prematched Nonlinear Performance 2.11 Model Modification 2.12 Summary References CHAPTER 3 FET-BasedAmplifiers 3.1 Class A 3.1.1 Overdriven Class A 3.2 Class B 3.2.1 Class AB 3.2.2 Overdriven Class B and AB 3.2.3 Summary of Operation Classes 3.3 Linearity in Amplifiers 3.4 Low-FrequencySimulations 3.5 Class F Amplifiers 3.5.1 Class F Low-FrequencySimulations 3.5.2 Class F Large Band 3.6 Inverse Class F Amplifiers 3.7 Millimeter-WaveAmplifiers 3.7.1 Load-PullProcess 3.7.2 Numerical Load-Pull 3.7.3 Class AB: Load-PullResults 3.7.4 Class F: Load-PullResults 3.7.5 Class A-ABMillimeter-WaveAmplifier 3.7.6 Class F Millimeter-WaveAmplifier References CHAPTER 4 Impedance Matching 4.1 Matching Requirements 4.2 Reactance Compensation 4.3 Matching with Lumped Prototypes 4.3.1 L-Section 4.3.2 L-Sectionand Reactance Compensation 4.3.3 Cascade of L Sections 4.3.4 PI Section 4.3.5 T Section 4.4 Matching with Distributed Prototypes 4.4.1 Single Line Match 4.4.2 Single Stub L Section 4.4.3 Three Transmission Lines 4.4.4 Selected Matching Topologies 4.5 Network Frequency Bandwidth 4.6 Conversion from Lumped to Distributed Elements 4.6.1 Shunt Stubs 4.6.2 Transmission Line 4.7 Capacitive Loaded Transmission Line 4.8 Impedance Inverters 4.9 Equalizers 4.10 Chip-LevelPower Combining 4.10.1 Port Impedance 4.10.2 Two-WayCombiner 4.10.3 Three-WayCombiner 4.10.4 Four-WayCombiner 4.10.5 Port Impedance References CHAPTER 5 Power Amplifiers 5.1 Design Methodology 5.1.1 Design Phase I 5.1.2 Design Phase II 5.1.3 Design Phase III 5.2 Transistor Cell Size 5.3 Design Criteria 5.3.1 Linear Amplifiers 5.3.3 High-EfficiencyAmplifiers 5.3.4 Design of OMN 5.3.5 Design of the ISMN 5.3.6 Design of Complete Amplifier 5.4 Case Study: High-EfficiencyAmplifier 5.4.1 OMN_04 5.4.2 ISMN2_4 5.4.3 ISMN1 and IMN 5.5 Case Study: Core Amplifier 5.5.1 OMN_03 5.5.2 ISMN2_03 5.6 Case Study: Linear Amplifier 5.6.1 OMN Linear Amp 5.6.2 ISMN2 Linear Amp 5.6.3 Optimization Process 5.7 Case Study: 5G New Radio (NR) Amplifier 5.8 EM Analysis Methodology 5.8.1 EE-to-EMConversion of 3:1 Combiners 5.8.2 Shunt Capacitors 5.8.3 Fringing Capacitance 5.8.4 EE to EM Conversion of 6:1 Circuits 5.8.5 EM Conversion of 2:6 Circuits 5.8.6 Fine-Tuningthe EM Circuit Block 5.8.7 Large-WidthTransmission Lines 5.9 Multistage Stability Analysis 5.9.1 K-Factorand μ-Factor 5.9.2 Loop Stability 5.9.3 Odd-ModeStability 5.9.4 MMIC Stability Example References CHAPTER 6 State-of-the-ArtMMIC Amplifiers 6.1 E-BandAmplifier 6.2 F-BandAmplifier 6.3 W-BandAmplifier 6.4 Ka-BandClass F Amplifier 6.5 GaN/Si Ka-BandAmplifier 6.6 Ka-BandHigh-EfficiencyAmpli 6.7 Ka-BandDoherty Amplifier References Appendix A Bias Filters A.1 In-BandFilters A.2 In-Band/Out-of-BandFilters A.3 Filtering Below 1 GHz A.4 MMIC Assembling for Evaluation Reference Appendix B Evaluation of MMICs B.1 Large Signal Measurements B.1.1 Calibration B.1.2 Evaluation B.2 Two-ToneLinearity Test B.3 AM-to-PM B.4 EVM and ACPR References About the Author Index