Phase Change Memory: Device Physics, Reliability and Applications

Description

This book describes the physics of phase change memory devices, starting from basic operation to reliability issues. The book gives a comprehensive overlook of PCM with particular attention to the electrical transport and the phase transition physics between the two states. The book also contains design engineering details on PCM cell architecture, PCM cell arrays (including electrical circuit management), as well as the full spectrum of possible future applications. Front Matter ....Pages i-xviii An Introduction on Phase-Change Memories (Agostino Pirovano)....Pages 1-10 Electrical Transport in Crystalline and Amorphous Chalcogenide (Daniele Ielmini)....Pages 11-39 Thermal Model and Remarkable Temperature Effects on the Chalcogenide Alloy (Mattia Boniardi)....Pages 41-64 Self-Consistent Numerical Model (Andrea Redaelli)....Pages 65-88 PCM Main Reliability Features (Robert Gleixner)....Pages 89-124 Structure and Properties of Chalcogenide Materials for PCM (Pierre Noé, Françoise Hippert)....Pages 125-179 Material Engineering for PCM Device Optimization (Véronique Sousa, Gabriele Navarro)....Pages 181-222 The Scaling of Phase-Change Memory Materials and Devices (Hasan Hayat, Krisztian I. Kohary, C. David Wright)....Pages 223-262 Phase-Change Memory Device Architecture (Fabio Pellizzer)....Pages 263-284 PCM Array Architecture and Management (Corrado Villa)....Pages 285-311 PCM Applications and an Outlook to the Future (Gregory Atwood)....Pages 313-324 Back Matter ....Pages 325-330