ENGLISH

HgCdTe infrared detector material: history, status and outlook

By Rogalski A.

Book information

Language
english
Format
PDF
Filesize
3 MB (3653024 bytes)
Pages
\70
Library
twirpx
Time added
2017-08-07 07:01:42
Приборостроение;Оптоэлектроника

Description

REPORTS ON PROGRESS IN PHYSICS 68 (2005) 2267-2336This article reviews the history, the present status and possible future developments of HgCdTeternary alloy for infrared (IR) detector applications. HgCdTe IRdetectors have been intensivelydeveloped since the first synthesis of this material in 1958. This article summarizes thefundamental properties of this versatile narrow gap semiconductor, and relates the materialproperties to its successful applications as an IR photoconductive and photovoltaic detectormaterial. An emphasis is put on key developments in the crystal growth and their influence ondevice evolution. Competitive technologies to HgCdTe ternary alloy are also presented.Recent advances of backside illuminated HgCdTe heterojunction photodiodes haveenabled a third generation of multispectral instruments for remote sensing applications andhave led to the practicality of multiband IR focal plane array technology. Finally, evaluationof HgCdTe for room temperature long wavelength IR applications is presented.

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