Dopants and Defects in Semiconductors, Second Edition

Description

Praise for the First Edition ''The book goes beyond the usual textbook in that it provides more specific examples of real-world defect physics ... an easy reading, broad introductory overview of the field'' ―Materials Today ..''. well written, with clear, lucid explanations ...'' ―Chemistry World This revised edition provides the most complete, up-to-date coverage of the fundamental knowledge of semiconductors, including a new chapter that expands on the latest technology and applications of semiconductors. In addition to inclusion of additional chapter problems and worked examples, it provides more detail on solid-state lighting (LEDs and laser diodes). The authors have achieved a unified overview of dopants and defects, offering a solid foundation for experimental methods and the theory of defects in semiconductors. Matthew D. McCluskey is a professor in the Department of Physics and Astronomy and Materials Science Program at Washington State University (WSU), Pullman, Washington. He received a Physics Ph.D. from the University of California (UC), Berkeley. Eugene E. Haller is a professor emeritus at the University of California, Berkeley, and a member of the National Academy of Engineering. He received a Ph.D. in Solid State and Applied Physics from the University of Basel, Switzerland. Content: 1. Semiconductor Basics 1.1 Historical Overview 1.2 Cubic Crystals 1.3 Other Crystals 1.4 Phonons and the Brillouin Zone 1.5 The Band Gap 1.6 Band Theory 1.7 Electrons and Holes 1.8 Doping 1.9 Optical Properties1.10 Electronic Transport1.11 Examples of Semiconductors 2. Defect Classifications 2.1 Basic Definitions 2.2 Energy Levels 2.3 Examples of Native Defects 2.4 Examples of Nonhydrogenic Impurities 2.5 Hydrogen 2.6 Defect Symmetry 2.7 Dislocations 3. Interfaces and Devices 3.1 Ideal Metal-Semiconductor Junctions 3.2 Real Metal-Semiconductor Junctions 3.3 Depletion Width 3.4 The p-n Junction 3.5 Applications of p-n Junctions 3.6 The Metal-Oxide-Semiconductor Junction 3.7 The Charge-Coupled Device3.8 Light Emitting Devices3.9 The 2D Electron Gas 4. Crystal Growth and Doping 4.1 Bulk Crystal Growth 4.2 Dopant Incorporation during Bulk Crystal Growth 4.3 Thin Film Growth 4.4 Liquid Phase Epitaxy 4.5 Chemical Vapor Deposition 4.6 Molecular Beam Epitaxy 4.7 Alloying 4.8 Doping by Diffusion 4.9 Ion Implantation 4.10 Annealing and Dopant Activation 4.11 Neutron Transmutation 5. Electronic Properties 5.1 Hydrogenic Model 5.2 Wave Function Symmetry 5.3 Donor and Acceptor Wave Functions 5.4 Deep Levels 5.5 Carrier Concentrations as a Function of Temperature 5.6 Freeze-Out Curves 5.7 Scattering Processes 5.8 Hopping and Impurity Band Conduction5.9 Spintronics 6. Vibrational Properties 6.1 Phonons 6.2 Defect Vibrational Modes 6.3 Infrared Absorption 6.4 Interactions and Lifetimes 6.5 Raman Scattering 6.6 Wave Functions and Symmetry 6.7 Oxygen in Silicon and Germanium 6.8 Impurity Vibrational Modes in GaAs 6.9 Hydrogen Vibrational Modes 7. Optical Properties 7.1 Free-Carrier Absorption and Reflection 7.2 Lattice Vibrations 7.3 Dipole Transitions 7.4 Band-Gap Absorption 7.5 Carrier Dynamics 7.6 Exciton and Donor-Acceptor Emission 7.7 Isoelectronic Impurities 7.8 Lattice Relaxation 7.9 Transition Metals 8. Thermal Properties 8.1 Defect Formation 8.2 Charge State 8.3 Chemical Potential 8.4 Diffusion8.5 Microscopic Mechanisms of Diffusion 8.6 Self-Diffusion 8.7 Dopant Diffusion 8.8 Quantum-Well Intermixing 9. Electrical Measurements 9.1 Resistivity and Conductivity 9.2 Methods of Measuring Resistivity 9.3 Hall Effect 9.4 Capacitance-Voltage Profiling 9.5 Carrier Emission and Capture 9.6 Deep-Level Transient Spectroscopy 9.7 Minority Carriers and Deep-Level Transient Spectroscopy 9.8 Minority Carrier Lifetime 9.9 Thermoelectric Effect 10. Optical Spectroscopy 10.1 Absorption 10.2 Emission 10.3 Raman Spectroscopy 10.4 Fourier Transform Infrared Spectroscopy 10.5 Photoconductivity 10.6 Time-Resolved Techniques 10.7 Applied Stress 10.8 Electron Paramagnetic Resonance 10.9 Optically Detected Magnetic Resonance 10.10 Electron Nuclear Double Resonance 11. Particle-Beam Methods 11.1 Rutherford Backscattering Spectrometry 11.2 Ion Range 11.3 Secondary Ion Mass Spectrometry 11.4 X-Ray Emission 11.5 X-Ray Absorption 11.6 Photoelectric Effect 11.7 Electron Beams 11.8 Positron Annihilation 11.9 Muons 11.10 Perturbed Angular Correlation Spectroscopy 11.11 Nuclear Reactions 12. Microscopy and Structural Characterization 12.1 Optical Microscopy 12.2 Scanning Electron Microscopy 12.3 Cathodoluminescence 12.4 Electron Beam Induced Current Microscopy 12.5 Diffraction 12.6 Transmission Electron Microscopy 12.7 Scanning Probe Microscopy