ENGLISH

Strain-Induced Effects in Advanced MOSFETs

By Viktor Sverdlov (auth.)

Book information

Publisher
Springer-Verlag Wien
Year
2011
ISBN
3709103819, 9783709103814
DOI
10.1007/978-3-7091-0382-1
Language
english
Format
PDF
Filesize
3 MB (2721455 bytes)
Series
Computational Microelectronics
Edition
1
Pages
252\268
Time added
2011-06-04 13:46:07
Electronics and MicroelectronicsInstrumentation

Description

Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given

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