Epitaxial Growth of III-Nitride Compounds

Description

This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so. It discusses important theoretical aspects of surface structures and elemental growth processes during the epitaxial growth of III-nitride compounds. In addition, it discusses advanced fundamental structural and electronic properties, surface structures, fundamental growth processes and novel behavior of thin films in III-nitride semiconductors. As such, it will appeal to all researchers, engineers and graduate students seeking detailed information on crystal growth and its application to III-nitride compounds. Front Matter ....Pages i-ix Introduction (Tomonori Ito)....Pages 1-5 Front Matter ....Pages 7-7 Computational Methods (Tomonori Ito, Toru Akiyama)....Pages 9-34 Fundamental Properties of III-Nitride Compounds (Toru Akiyama)....Pages 35-53 Fundamental Properties of III-Nitride Surfaces (Toru Akiyama)....Pages 55-92 Front Matter ....Pages 93-93 Thermodynamic Approach to InN Epitaxy (Yoshihiro Kangawa)....Pages 95-108 Atomic Arrangement and In Composition in InGaN Quantum Wells (Yoshihiro Kangawa)....Pages 109-124 Initial Epitaxial Growth Processes of III-Nitride Compounds (Toru Akiyama)....Pages 125-144 Polarity Inversion and Electron Carrier Generation in III-Nitride Compounds (Takashi Nakayama)....Pages 145-170 Defects in Indium-Related Nitride Compounds and Structural Design of AlN/GaN Superlattices (Kenji Shiraishi)....Pages 171-183 Novel Behaviors Related to III-Nitride Thin Film Growth (Toru Akiyama)....Pages 185-218 Back Matter ....Pages 219-223