Physics and Chemistry of III-V Compound Semiconductor Interfaces
Book information
Description
The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.
Similar books
Ferroelectric Materials and Ferroelectricity
1970 · PDF
The Lattice Dynamics and Static of Alkali Halide Crystals
1979 · PDF
Luminescence Centers in Crystals
1976 · PDF
Surface Properties of Semiconductors and Dynamics of Ionic Crystals
1971 · PDF
Tunneling Phenomena in Solids: Lectures presented at the 1967/NATO Advanced Study Institute at Risö, Denmark
1969 · PDF
Radiation Effects in Semiconductors and Semiconductor Devices
1995 · PDF
Switching in Semiconductor Diodes
1995 · PDF
Applied Solid State Physics
1995 · PDF