ENGLISH

Record low Temperature Mo doped V2O5 Thermochromic Thin Films for Optoelectronic Applications

By Nazemiyan M. , Jalili Y.S.

Book information

Language
english
Format
PDF
Filesize
1 MB (1392705 bytes)
Pages
\8
Library
twirpx
Time added
2017-08-07 07:01:42
Приборостроение;Оптоэлектроника

Description

AIP Publishing, AIP Advances 3, 112103 (2013); doi: 10.1063/1.4829663 (Received 9 February 2013; accepted 14 October 2013; published online 4 November 2013). - 8 с.M. Nazemiyan and Y. S. Jalili.Department of physics, Science & Research Campus, IAU. P. O. Box: 14665-678, Tehran, Iran.SheykhBahaee Experimental Research Center, P. O. Box: 14665-678, Tehran, Iran.Thermochromic properties of polycrystalline molybdenum doped vanadium pentoxide thin films grown by the spray pyrolysis technique were investigated. Tetragonal thin film structures of this system are grown. The transmittance spectral analysis with temperature indicates a record semiconductor-metal transition temperature of 50°C. This critical temperature is approximately 1/3 to 1/6 of magnitude expected for V2O5 thin films. The resistance of the thermochromic thin film also underwent a transition or phase change as expected, a reduction from more than few mega ohms to less than kilo ohm regime indicating potential applications in optoelectronics.Introduction.Experimental Details.Results and Discussion.Conclusion.Acknowledgments.

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