Selective Growth of Si Nanowire Arrays via Galvanic Displacement Processes in Water-in-Oil Microemulsions

Description

Статья "Селективный рост кремниевых блоков нанопроводов через процессы гальванического смещения в обратных микроэмульсиях" журнала Journal of the American Chemical Society, 2005 год, #127 (13), страницы 4574-4575Semiconductor nanowires are expected to break through the fabrication limitations of the present IC industry and be employed as both interconnects and functional units in electronic, optoelectronic, electrochemical, and electromechanical devices. Although significant progress has been made recently in the development of nanowire-based sensors, field effect transistors, and lasers, the synthesis and assembly of nanowires for reproducible massfabrication of these devices remain a challenge. Among the bottomup approaches, the vapor-liquid-solid (VLS) method has attracted much attention for its application in synthesizing single-crystalline nanowires of various compositions in large quantities and its selfalignment capability during the growth of nanowires. Thediameters of the nanowires synthesized by the VLS method are mainly determined by the size of the metal clusters that serve as the nucleation sites during the initial phase of the nanowire growth.