ENGLISH

Quantum Dot Devices

Book information

Publisher
Springer
Year
2012
ISBN
1461435692, 9781461435693
Language
english
Format
PDF
Filesize
13 MB (14077505 bytes)
Pages
370\375
Time added
2021-11-08 18:12:15

Description

Quantum dots as nanomaterials have been extensively investigated in the past several decades from growth to characterization to applications. As the basis of future developments in the field, this book collects a series of state-of-the-art chapters on the current status of quantum dot devices and how these devices take advantage of quantum features. Written by 56 leading experts from 14 countries, the chapters cover numerous quantum dot applications, including lasers, LEDs, detectors, amplifiers, switches, transistors, and solar cells. Quantum Dot Devices is appropriate for researchers of all levels of experience with an interest in epitaxial and/or colloidal quantum dots. It provides the beginner with the necessary overview of this exciting field and those more experienced with a comprehensive reference source. Quantum Dot Devices Preface Contents Contributors 1 Optically Injected Single-Mode Quantum Dot Lasers Abstract Introduction Experimental Details Modeling QD Laser Equations Reduction to QW Laser Equations Steady States and Stability Analysis Adiabatic Elimination Steady States Linear Stability Class A Laser Conclusions Acknowledgments References 2 Exotic Behavior in Quantum Dot Mode-Locked Lasers: Dark Pulses and Bistability Abstract Introduction Background QD Gain Chip Gain and Absorption Dynamics Gain Recovery Dynamics Absorption Recovery Dynamics Dark Pulse Laser Bistable Quantum Dot Lasers Introduction Mode Competition Device Structure and Characterization Device 1 Devices 2 and 3 Switching Mechanism Switchable Spacing Switching Time Conclusion References 3 Spectral Splitting Effects and Their Influence to the Performance of Quantum Dot Mode Locked Lasers Abstract Introduction Ground-State Splitting Pulse Width Narrowing Due to GSS Dual State Mode Locking Due to GSS Device’s Structural Parameters that Enable GSS Conclusion References 4 Mode-Locked Semiconductor Lasers with Optical Injection Abstract Introduction Devices Description and Fabrication Noise Properties of PMLLs RF Linewidth of PMLLs Modal Optical Linewidth of PMLL Direct Electric Field Measurements Improvement of QD-MLLs Characteristics Applying Optical Injection Injection-Locking to a Single-Tone CW Master Source Experimental Setup Optical Spectrum of Injection-Locked QD-MLL Numerical Simulations Modal Optical Linewidth Injection-Locking to a Dual-Tone Coherent Master Source Conclusions References 5 Catastrophic Optical Damage in Quantum Dot Lasers Abstract Introduction High Power Performance in QD Lasers Thermal Runaway and COD Suppression of COD Formation of Non-absorbing Mirrornon-absorbing mirror by Laserlaser Annealing Conclusions References 6 Post-Growth Intermixing of GaAs Based Quantum Dot Devices Abstract Introduction Quantum Well Intermixing Quantum Dot Intermixing Effects of Intermixing on InGaAs/GaAs Quantum DotQuantum dots and Potential Device Applications Post-Growth Intermixing and High Temperature Epitaxial Growth Post-growth IntermixingPost-growth intermixing Induced Optical Properties and Quality Changing of InGaAlAs/GaAs QDs and Potential Device Applications Effects of Caps on the Post-Growth Intermixing of InGaAsInGaAs/GaAs QDs QDI for Opto-Electronic Devices Application Tunable Interband and Intersubband Transitions in Modulation C-doped InGaAsInGaAs/GaAs Quantum Dot Lasers by a Post-Growth Intermixing Process The Fabrication of High Power and Broadband QD-SLEDs by Post-Growth Intermixing Process Conclusion for QDI and Outlook for Further Developments References 7 Photonic Crystal Cavity Lasers Abstract Introduction PC Cavities 1D PC Laser High Speed Modulation of PC Lasers Electrical Pumping of PC Lasers Future Directions and Outlook Acknowledgments References 8 InGaAsInGaAs SubmonolayerSubmonolayer Quantum-Dot Photonic-Crystal LEDs for Fiber-Optic Communications Abstract Introduction Epitaxial Growth of the InGaAsInGaAs SML QD LEDs and Device Fabrication of the PhC-LEDs Measurement Results and Analysis of the InGaAsInGaAs SML QD PhC-LEDs Conclusions References 9 Quantum Optical Transistor and Other Devices Based on Nanostructures Abstract Introduction A Quantum Optical Transistor with a Single QD in a Photonic Crystal Nanocavity Measurement of Vacuum Rabi Splitting A Quantum Optical Transistor Light Manipulation Devices in a QD Coupled to a NR System Slow Light and Fast Light Quantum Memory for Light Conclusions Outlook Acknowledgements References 10 Quantum Dot Switches: Towards Nanoscale Power-Efficient All-Optical Signal Processing Abstract Introduction Current Status of QD-Based Ultrafast Photonic Devices Power-Efficient All-Optical QD Switches Optical Nonlinearity and Carrier Dynamics Design of Vertical Cavities Zero Reflection Condition Absorption Nonlinearity Nonlinear Refractive Index Designed Structure Growth of the Vertical Cavity and QDs Switching Based on Absorption Nonlinearity Characterization of All-Optical QD Switches Switching Dynamics Excited State Switching Broadband Operation with Angular-Dependent Switching Enhance the Absorption Nonlinearity Exploring the Phase Properties Summary Acknowledgments References 11 Ultrafast Terahertz Dynamics and Switching in Quantum Dots Abstract Introduction Ultrafast Dynamics of Capture and Release of Carriers in Quantum Dots Principles of Transient Conductivity Measurements Using Optical Pump--THz Probe Spectroscopy Ultrafast Carrier Dynamics in Quantum Dots Observed by THz Spectroscopy: Experimental Results and Discussion Ultrafast All-Optical Switching in Quantum Dots With THz Pulses: THz Electro-Absorption Effect Principles of Strong-Field THz Pulse Generation, and THz Pump--Optical Probe Spectroscopy Electro-Absorption Modulation in Quantum Dots: Quantum-Confined Stark Effect THz Switching in Quantum Dots: Experimental Results and Discussion Conclusion Acknowledgements References 12 Nonlinear Optics and Saturation Behavior of Quantum Dot Samples Under Continuous Wave Driving Abstract Introduction Modeling and Simulation Results The Model Carrier Dynamics and Dielectric Susceptibility Cavity Equation Propagation Equations Numerical Results: Single-Pass Propagation Parameters and Numerical Scheme Results: Saturation of Absorption and Gain Results: Self-Lensing Numerical Results: Cavity Dynamics Nonlinear Refractive Index and \alpha-Factor Nonlinear Phase Shift and Fabry-Perot Fringes Optical Bistability Experiments on InAs/GaAs QD Around 1,250 nm Devices and Experimental Setup Experimental Results on Saturation of Gain and Absorption Analysis and Discussion Experiments Addressing Nonlinear Index Shifts Experiments on InAlAs/GaAlAs QD at 780 nm Description of the Experiments Material Properties and Device Structure Principle of the Experiment Experimental Setup Experimental Results on Saturation of Absorption Measurements on Fabry-Perot Fringes Absorption Saturation Summary and Conclusion Acknowledgements References 13 Quantum Dots with Built-in Charge for Enhancing Quantum Dot Solar Cells and Infrared Photodetectors Abstract Introduction Self-Assembled Growth of InAs/GaAs Quantum Dots Using MBE Potential Barriers in QD Structures Photoelectron Capture Carrier Capture in an Electric Field Strong Enhancement of QD Solar Cell Efficiency due to Potential Barrierspotential barriers Fundamental Issues in Solar Cells Q-BIC Solar Cell Application of Potential Barrierspotential barriers for QD IR Ohotodetectors Conclusion Acknowledgments References 14 Semiconductor Quantum Dot-Sensitized Solar Cells Employing TiO2 Nanostructured Photoanodes with Different Morphologies Abstract Introduction Sample Preparation and Characterization TiO2 Nanoparticulate Photoanodes TiO2 Nanotube Photoanodes TiO2 Inverse Opal Photoanodes Adsorption of CdSeCdSe QDs and Combined CdS/CdSe QDs Optical Absorption Measurements Incident Photon-Current Conversion Efficiency IPCE and Photovoltaic Property Measurements Results and Discussion CdSeCdSe and Combined CdS/CdSe QDSCs Employing TiO2 Nanoparticulate Photoanodes CdSeCdSe QDSCs Employing TiO2 Nanotube Photoanodes CdSeCdSe QDSCs Employing TiO2 Inverse Opal Photoanodes Summary Acknowledgments References 15 Optoelectronic Applications of Colloidal Quantum Dots Abstract Introduction Synthesis and Properties of QDQuantum dot-Based Structures Incorporating Colloidal QDs Phenomena Dealing with PL and LED Applications Using QDQuantum-dot-Based Structures Photodetector Concepts Based on QD Arrays Solar Cell Structures Incorporating QDs Biomolecule-Based Molecular Sensors Based on Colloidal QDs Summary References Index

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