ENGLISH

Polycrystalline Silicon for Integrated Circuit Applications

Book information

Publisher
Springer US
Year
1988
ISBN
978-1-4612-8949-4, 978-1-4613-1681-7
DOI
10.1007/978-1-4613-1681-7
Language
english
Format
PDF
Filesize
9 MB (9185502 bytes)
Series
The Kluwer International Series in Engineering and Computer Science 45
Edition
1
Pages
290\301
Orientation
yes
Scanned
yes
Time added
2013-08-01 04:00:00

Description

Recent years have seen silicon integrated circuits enter into an increasing number of technical and consumer applications, until they now affect everyday life, as well as technical areas. Polycrystalline silicon has been an important component of silicon technology for nearly two decades, being used first in MOS integrated circuits and now becoming pervasive in bipolar circuits, as well. During this time a great deal of informa­ tion has been published about polysilicon. A wide range of deposition conditions has been used to form films exhibiting markedly different properties. Seemingly contradictory results can often be explained by considering the details of the structure formed. This monograph is an attempt to synthesize much of the available knowledge about polysilicon. It represents an effort to interrelate the deposition, properties, and applications of polysilicon so that it can be used most effectively to enhance device and integrated-circuit perfor­ mance. As device performance improves, however, some of the proper­ ties of polysilicon are beginning to restrict the overall performance of integrated circuits, and the basic limitations of the properties of polysili­ con also need to be better understood to minimize potential degradation of circuit behavior.

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