Fundamentals of Silicon Carbide Technology. Growth, Characteriztion, Devices, and Applications

Description

Wiley-IEEE Press, 2014. — 400 p.A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applicationsBased on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications.Introduction Physical Properties of Silicon Carbide Bulk Growth of Silicon Carbide Epitaxial Growth of Silicon Carbide Characterization Techniques and Defects in Silicon Carbide Device Processing of Silicon CarbideUnipolar and Bipolar Power DiodesUnipolar Power Switching DevicesBipolar Power Switching DevicesOptimization and Comparison of Power DevicesApplications of Silicon Carbide Devices in Power SystemsSpecialized Silicon Carbide Devices and Applications