ENGLISH

Ti-Sb-Te Phase Change Materials: Component Optimisation, Mechanism and Applications

By Min Zhu (auth.)

Book information

Publisher
Springer Singapore
Year
2017
ISBN
978-981-10-4381-9, 978-981-10-4382-6
DOI
10.1007/978-981-10-4382-6
Language
english
Format
PDF
Filesize
7 MB (7273386 bytes)
Series
Springer Theses
Edition
1
Pages
XVI, 124\136
Time added
2017-06-25 01:07:36
Instrumentation;Phase Transitions and Multiphase SSemiconductors;Electronic Circuits and Devices;Ele

Description

This book introduces a novel Ti-Sb-Te alloy for high-speed and low-power phase-change memory applications, which demonstrates a phase-change mechanism that differs significantly from that of conventional Ge2Sb2Te5 and yields favorable overall performance. Systematic methods, combined with better material characteristics, are used to optimize the material components and device performance. Subsequently, a phase-change memory chip based on the optimized component is successfully fabricated using 40-nm complementary metal-oxide semiconductor technology, which offers a number of advantages in many embedded applications.

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