Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors: Volume 2, Photodetectors

Description

Three-volumes book “Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors” is the first to cover both chemical sensors and biosensors and all types of photodetectors and radiation detectors based on II-VI semiconductors. It contains a comprehensive and detailed analysis of all aspects of the application of II-VI semiconductors in these devices. The second volume “Photodetectors” of a three-volume set, focus on the consideration of all types of optical detectors, including IR detectors, visible and UV photodetectors. This consideration includes both the fundamentals of the operation of detectors and the peculiarities of their manufacture and use. In particular, describes numerous strategies for their fabrication and characterization. An analysis of new trends in development of II-VI semiconductors-based photodetectors such as graphene/HgCdTe-, nanowire- and quantum dot-based photodetectors, as well as solution-processed, multicolor, flexible and self-powered photodetectors, are also given.  Preface Contents About the Editor Contributors Part I: IR Detectors Based on II–VI Semiconductors Chapter 1: Introduction in IR Detectors 1.1 Introduction 1.2 IR Photodetectors 1.2.1 Thermal (Non-selective) IR Detectors 1.2.2 Photonic Radiation Detectors 1.2.3 IR Photodetectors Array 1.2.4 Photosensitive Materials for IR Technology 1.2.5 Comparison of Thermal and Photonic Infrared Detectors 1.2.6 Parameters Characterizing IR Photodetectors 1.2.7 The Role of the Atmosphere in IR Technology References Chapter 2: Photoconductive and Photovoltaic IR Detectors 2.1 Introduction to Photoconductive and Photovoltaic IR Detectors on II-VI Semiconductors 2.2 Hg-Based Materials for IR Photon Detectors 2.3 Photoconductive and Photovoltaic IR Detectors: Design, Performance, Advantage, and Disadvantages 2.3.1 Photonic Mechanism of Detection 2.3.2 Photonic Detector Characterization 2.3.3 Photoconductive IR Detectors 2.3.4 Photovoltaic IR Detector 2.4 High Operation Temperature IR Detector 2.4.1 Ways to Improve Detector’s Performance Without Cooling 2.4.2 Photoelectromagnetic Effect IR Detectors 2.4.3 Magnetoconcentration IR Detectors 2.4.4 Dember Effect IR Detectors 2.5 PC and PV IR Detectors Manufacturing References Chapter 3: II–VI Compound Semiconductor Avalanche Photodiodes for the Infrared Spectral Region: Opportunities and Challenges 3.1 Introduction 3.2 Background and Roadmap 3.3 Alloy Composition and Technology 3.4 General Architecture and Operation 3.5 Fabrication and Processing 3.6 Device Concept Design and Engineering 3.7 Concluding Remarks and Outlook References Chapter 4: IR Detectors Array 4.1 Introduction 4.1.1 Materials and Types of IR Detectors 4.1.2 Photonic IR FPAs and Basic Materials Used to Develop Them 4.1.2.1 Materials Used in the Development of Photonic IR FPAs 4.1.2.2 Photonic IR FPAs 4.2 Photovoltaic HgCdTe-Based FPAs 4.2.1 Technological Developments 4.2.2 Photonic Cooled Detectors 4.2.3 Performances of MWIR and LWIR FPAs 4.2.3.1 Cooled FPAs for the Spectral Range of 8–12 μm 4.2.3.2 Cooled Photodetectors Array for the Spectral Range of 3–5 μm 4.3 Trends in FPAs Development 4.3.1 Pixel Size Reduction 4.3.2 Quantum-Dimensional Structures 4.3.3 Monolithic and Multispectral FPAs 4.3.4 High Operation Temperature FPAs References Chapter 5: New Trends and Approaches in the Development of Photonic IR Detector Technology 5.1 Introduction 5.2 High Operating Temperature (HOT) Detectors 5.3 Quantum Well Infrared Photodetectors 5.4 Type-II Strained-Layer Superlattice 5.5 Multi-Stage or Cascade IR Detectors 5.6 Unipolar/Monovalent Barrier IR Detectors 5.7 HgCdTe-Based Superlattice 5.8 Quantum Dot Infrared Photodetectors (QDIPs) 5.9 Multicolor IR Detectors 5.10 Photon Trapping Detectors 5.11 Nano Wire-Based Photodetectors 5.12 New Emerging Nanomaterials for Detection 5.13 Summary References Chapter 6: II-VI Semiconductor-Based Unipolar Barrier Structures for Infrared Photodetector Arrays 6.1 Introduction 6.2 Basics of Barrier Detectors Based on II-VI Semiconductors 6.3 HgCdTe Based nBn Unipolar Barrier Structures 6.4 HgCdTe Based Unipolar Barrier Structures with P-Type Layers 6.5 HgCdTe Based nBn Unipolar structures with Superlattice Barriers 6.6 HgCdTe Based NBνN HOT Unipolar Structures 6.7 Summary References Chapter 7: Infrared Sensing Using Mercury Chalcogenide Nanocrystals 7.1 Introduction 7.2 Enabling Transport and Photoconduction in Nanocrystal Films 7.2.1 Solid-State Ligand Exchange 7.2.2 Ink Preparation 7.3 From Proof of Concept to High Performances Sensors 7.3.1 Photoconductive Devices 7.3.2 Phototransistor 7.3.2.1 Gating Technology 7.3.2.2 Advantages of Phototransistors 7.4 Beyond the Control of the Dark Current 7.4.1 Photodiode 7.4.2 Performance Comparison 7.5 Light Management in HgX Nanocrystal Films 7.5.1 Enhancement of Absorption 7.5.2 Spectral Shaping 7.6 From Single Pixel to Focal Plane Array 7.7 Intraband Device 7.8 Conclusion References Chapter 8: Graphene/HgCdTe Heterojunction-Based IR Detectors 8.1 Introduction 8.2 Graphene/HgCdTe Heterojunction Based IRDs 8.2.1 Early Generation IRD Technologies 8.2.2 Existing and Next Generation Technologies, Challenges, and Prospects of Effective IR Detection 8.2.3 Graphene/HgCdTe Detector Fabrication and Operating Principle 8.2.4 Graphene/HgCdTe Heterojunction Based IRD Structures and Operation 8.2.5 Graphene/HgCdTe Heterojunction Based IRD Modelling Approach 8.3 Conclusion and Future Prospects References Part II: II–VI Semiconductors–Based Detectors for Visible and UV Spectral Regions Chapter 9: CdTe-Based Photodetectors and Solar Cells 9.1 Introduction 9.2 Noteworthy Applications 9.2.1 Infrared Window 9.2.2 Electro-Optical Modulator 9.2.3 UV-Vis-Photodetector 9.3 Solar Cells 9.3.1 The Substrate 9.3.2 The Front Contact 9.3.3 The Window Layer 9.3.4 The Absorber Layer 9.3.5 The Heat Treatment in Chlorine Atmosphere 9.3.6 The Back-Contact 9.4 Conclusion References Chapter 10: CdSe – Based Photodetectors for Visible-NIR Spectral Region 10.1 Introduction 10.2 CdSe Carrier Dynamics 10.3 Photoconductors and Schottky Photodiodes 10.4 Heterojunction Based Photodetectors 10.5 CdSe-Organic Hybrid Photodetectors 10.6 Application of CdSe Based Photodetectors 10.7 Summary References Chapter 11: CdS-Based Photodetectors for Visible-UV Spectral Region 11.1 Introduction 11.2 Conventional Photodetectors and Features of Their Functioning 11.3 Fabrication of Photosensitive Devices 11.3.1 CdS PDs Based on Nanostructures 11.3.2 CdS-Based Heterostructures in PDs 11.3.3 CdS-Based Field Effect Transistor (FET) PDs 11.3.4 CdS-Based Self-Powered Photodetectors 11.4 Performance and Figures of Merit (FOM) of CdS Based UV-Visible Photodetectors 11.4.1 Self-Powered Photodetectors 11.4.2 Photodetectors Based on Nanostructures 11.4.3 CdS Photodetectors Using Piezo-Phototronic Effect 11.5 Summary References Chapter 12: ZnTe-Based Photodetectors for Visible-UV Spectral Region 12.1 Introduction 12.2 Optical Properties of ZnTe 12.3 Thin Film ZnTe Based Photodetectors 12.3.1 ZnTe Thin Film with Vacuum Evaporation Method 12.3.2 ZnTe Thin Film with Wet Chemical Method 12.4 ZnTe Nanostructures Based Photodetectors 12.4.1 One Dimensional ZnTe Based Photodetectors 12.4.2 Two Dimensional ZnTe Based Photodetectors 12.5 ZnTe Based Photodetectors for Terahertz Region 12.6 Heterostructured ZnTe Based Photodetectors 12.6.1 ZnTe-Si Heterostructures Based Photodetectors 12.6.2 Heterostructures Based on II-VI Semiconductors 12.7 ZnTe-Based Materials for Solar Cells 12.8 Summary and Outlook References Chapter 13: ZnSe-Based Photodetectors 13.1 Introduction 13.2 Photoconductive Photodetectors 13.3 The p–n Junction Photodiodes 13.4 The p-i-n Junction Photodiodes 13.5 Schottky Photodiodes 13.6 Metal–Semiconductor–Metal Photodiodes 13.7 Heterostructure-Based Photodetectors 13.8 Phototransistors 13.9 Nanowire-Based ZnSe Photodetectors 13.10 Photodetectors Based on Hybrid Structures References Chapter 14: ZnS-Based UV Detectors 14.1 Introduction 14.2 ZnS-Based Photodetectors References Chapter 15: Photodetectors Based on II-VI Multicomponent Alloys 15.1 Introduction 15.2 Photodetectors with Controlled Spectral Response 15.2.1 Solar Cells 15.2.2 Detectors for Visible Range 15.2.3 UV Detectors 15.3 Solid Solutions Providing Lattice Matching of Contacting Semiconductor Materials 15.4 Optimization of Electrophysical and Physical Properties of II-VI Compounds 15.5 Summary References Part III: New Trends in Development of II–VI Semiconductors–Based Photodetectors Chapter 16: Nanowire-Based Photodetectors for Visible-UV Spectral Region 16.1 Introduction 16.2 Synthesis of NWs 16.3 Fabrication Features of NW-Based Photodetectors 16.3.1 Direct NW Integration 16.4 Single NW-Based Photodetectors 16.4.1 Photoconductive Detectors Employing Single NWs 16.4.2 Phototransistors 16.5 NWs-Based Heterostructures 16.5.1 Core-Shell Heterojunctions 16.5.2 1D Axial Heterojunctions 16.5.3 Crossed NW Heterojunctions 16.5.4 1D Nanostructure/Thin Film or Si Substrate Heterojunctions 16.5.5 Photodetector Performance 16.6 Schottky Barrier-Based Photodetectors 16.7 Summary References Chapter 17: QDs of Wide Band Gap II–VI Semiconductors Luminescent Properties and Photodetector Applications 17.1 Introduction 17.2 II-VI Semiconductor Quantum Dots-Based PDs and Their Fabrication Methods 17.3 QD Core/Shell Structures 17.4 Doping Influence on QDs Properties 17.5 1D Structures and QDs in Heterostructure-Based Photodetectors 17.6 QDs-Polymer Hybrid Strcutures 17.7 Photodetectors Based on QDs-Polymer Composites 17.8 PDs Based on 0D-2D Hybrid Structures 17.9 Outlook References Chapter 18: Solution-Processed Photodetectors 18.1 Introduction 18.2 Solution Processed II-VI Semiconductor-Based Solar Cells and Photodetectors 18.3 Solution-Processed Photodetectors with Direct Wet Chemical Synthesis of Photosensitive Layers 18.3.1 Chemical Bath Deposition (CBD) 18.3.2 Successive Ionic Layer Adsorption and Reaction Technique (SILAR) 18.4 Solution Processed Photodetector Fabricated Using Methods of Thick Film Technology 18.5 Combined Approach to the Fabrication of Solution-Processed Photodetectors 18.6 Outlook and Perspectives of Solution-Processed Technology 18.7 Conclusion References Chapter 19: Multicolor Photodetectors 19.1 General 19.2 HgCdTe Multicolor Detectors 19.2.1 Dual-Band HgCdTe Detectors 19.2.2 Three-Color HgCdTe Detectors 19.3 Conclusions References Chapter 20: Flexible Photodetectors Based on II-VI Semiconductors 20.1 Introduction 20.2 Device Structure and Substrate Materials of Flexible Photodetectors 20.2.1 Device Structure 20.2.2 Substrate Materials 20.3 Flexible Photodetectors Based on II-VI Semiconductors 20.3.1 0D II-VI Nanostructures Based Flexible Photodetectors 20.3.2 1D II-VI Semiconductors Based Flexible Photodetectors 20.3.3 2D II-VI Semiconductors Based Flexible Photodetectors 20.4 Applications of Flexible Photodetector 20.4.1 Wearable Monitoring Sensors 20.4.2 Image Sensors 20.4.3 Self-Powered Integrated Wearable Electronics 20.5 Conclusion and Outlook References Chapter 21: Self-Powered Photodetector 21.1 Introduction 21.2 II–VI Materials Based Self-Powered Schottky Photodetectors 21.2.1 Graphene or Carbon Based Self-Powered Schottky Photodetectors 21.2.2 Other Self-Powered Schottky Photodetectors 21.2.3 II–VI Quantum Dots-Based Self-Powered Schottky Photodetectors 21.3 Heterojunction Based Self-Powered Photodetectors 21.3.1 Some Conventional Heterojunction Based Self-Powered Photodetectors 21.3.2 2D Semiconducting Transition Metal Dichalcogenide (TMD) Heterostructure Materials Based Self-Powered Photodetectors 21.3.3 Inorganic-Organic Hybrid Heterostructures Based Self-Powered Photodetectors 21.4 Spectrum Selective Self-Powered Photodetectors 21.5 Conclusion References Index