Physics of p-n Junctions and Semiconductor Devices

Description

Front Matter ....Pages i-ix Differential Resistance and Diffusion Capacitance of Junctions in p-n-n+ Structures at high Injection Levels (D. A. Aronov, Ya. P. Kotov)....Pages 1-7 Static Current-Voltage Characteristic of a p-n-p-n Structure in the on State (A. A. Lebedev)....Pages 8-10 Distribution of the Intensity of Recombination Radiation and of the Voltage Drop in Diffused p-n Junctions in Gallium Arsenide (V. G. Voronin, A. V. Petukhov, I. V. Ryzhikov, V. F. Titova)....Pages 11-15 Low-Energy Recombination Radiation of p-n Junctions in GaAs (V. M. Lomako, V. D. Tkachev, D. S. Domanevskii)....Pages 16-17 Electroluminescence and Cathodoluminescence of p-n Junctions in GaAs (V. M. Lomako, D. S. Domanevskii, V. D. Tkachev)....Pages 18-22 Film Devices Prepared by the Ion Bombardment Method (G. A. Kachurin, A. E. Gorodetskii, V. M. Zelevinskaya, L. S. Smirnov)....Pages 23-25 Kinetics of the Establishment of the Current in Polycrystalline Films of PbS (V. G. Butkevich, I. A. Drozd)....Pages 26-28 Investigation of the Time Constants of an Indium Arsenide Laser (V. B. Buber, V. V. Nikitin, K. P. Fedoseev)....Pages 29-31 Transient Processes in Semiconductor Injection Lasers with Strong Optical Coupling (V. A. Grekhnev, V. D. Kurnosov, A. A. Pleshkov, O. N. Prozorov, L. A. Rivlin, A. T. Semenov et al.)....Pages 32-38 Possibility of Pair Correlation of Electrons and Holes in a Sandwich Consisting of n- and p- Type Semiconductor Films (V. G. Kogan, B. A. Tavger)....Pages 39-45 Theory of the Electroacoustic Interaction at a Metal-Semiconductor Point Contact (É. G. Melikyan)....Pages 46-50 Investigation of the Field in a Tunnel Diode with a Heterojunction (S. N. Dobrynin)....Pages 51-59 Irreversible Changes in the Properties of an Injection Laser at High Excitation Levels (Yu. I. Kruzhilin)....Pages 60-64 Electrical Properties of Diffused p-n Junctions in Indium Arsenide (Yu. D. Mozzhorin, V. I. Stafeev)....Pages 65-70 Parameters of the Active Region in an Injection Laser (Yu. I. Kruzhilin)....Pages 71-75 Minimum Threshold Current for an Injection Laser and Its Relationship with the Gain Factor (Yu. I. Kruzhilin)....Pages 76-77 Special Features of Exposure-Illuminance Characteristics of the Photopolarization of HgI2Single Crystals (V. F. Zolotarev, D. G. Semak, D. V. Chepur)....Pages 78-83 Alloyed p-n Junctions Made of Be-Doped p-Type SiC (A. A. Kal’nin, V. V. Pasynkov, Yu. M. Tairov, D. A. Yas’kov)....Pages 84-88 Modulation of λ = 3.39µ Laser Radiation by Excess Carriers in a Gallium Arsenide Diode (Yu. A. Bykovskii, I. G. Goncharov, V. A. Maslov)....Pages 89-91 Impurity Photoeffect in GaAs p-n Junctions (A. A. Gutkin, É. M. Magerramov, D. N. Nasledov, V. E. Sedov)....Pages 92-98 1/f Noise of Surface-Barrier Diodes (N. I. Sablina, N. B. Strokan)....Pages 99-103 Electrical Properties of α (Ge) — GaAs Heterojunctions (Ya. A. Fedotov, V. S. Zased, É. A. Matson)....Pages 104-106 Cadmium Telluride Nuclear-Radiation Counter (P. S. Kireev, L. I. Kalugina, A. V. Vanyukov, I. P. Shilo)....Pages 107-109 Filamentation of the Current in Diodes Made of Semiconductors with Deep Impurity Levels (I. V. Varlamov, I. A. Sondaevskaya, V. P. Sondaevskii)....Pages 110-114 High-Temperature Silicon Carbide Rectifiers for High Reverse Voltages (V. I. Pavlichenko, I. V. Ryzhikov, T. G. Kmita)....Pages 115-119 Theory of the “dU/dt EFFECT” in Thyristors (V. A. Kuz’min)....Pages 120-126 Radiative Transitions in InAs Laser Diodes (N. S. Baryshev)....Pages 127-128 Characteristics of Radiation Emitted During Avalanche and Tunnel Breakdown of Silicon p-n Junctions (V. G. Mel’nik)....Pages 129-133 Dependence of the Breakdown Voltage of Silicon p-n Junctions on the Surface Potential (E. V. Ostroumova)....Pages 134-136 Some Features of the Temperature Dependence of the Static Turn-On Current of Thyristors (A. N. Dumanevich, R. E. Smolyanskii, V. E. Chelnokov)....Pages 137-141 Tunnel p-n Junctions in Indium Phosphide (A. N. Imenkov, N. V. Siukaev, M. K. Khadikov)....Pages 142-144 Some Characteristics of The Capacitance of n’—p-n Structures with “Deep” Levels (L. L. Makovskii, S. M. Ryvkin, N. B. Strokan, V. P. Subasheva, A. Kh. Khusainov)....Pages 145-149 Investigation of DC Injection Lasers (P. G. Eliseev, A. I. Krasil’nikov, M. A. Man’ko, V. P. Strakhov)....Pages 150-159 Electrical Properties of Silicon p-n Junctions Subjected to Nonuniform Deformation (A. L. Polyakova, V. V. Shklovskaya-Kordi)....Pages 160-165 Dependence of the Sensitivity of p-n Junctions to Nonuniform Deformation on the Depth of the Junction Below the Surface (V. V. Zadde, A. K. Zaitseva, A. L. Polyakova, V. V. Shklovskaya-Kordi)....Pages 166-169 “Critical” Turn-on Charge of a Thyristor (A. I. Uvarov)....Pages 170-179 Spectral Narrowing of the Radiation From InP and InP1-XAsX Injection Lasers (P. G. Eliseev, I. Ismailov)....Pages 180-182 Departure from Quasi-Equilibrium in Semiconductors and Multimode Laser Emission (V. S. Mashkevich, V. A. Parnyuk)....Pages 183-190 An Investigation of Photodiode Response (N. Sh. Khaikin, M. A. Trishenkov)....Pages 191-196 Current—Voltage Characteristics of p-n Junctions in Indium Phosphide—Gallium Arsenide Solid Solutions (V. I. Osinskii, N. N. Sirota, G. G. Shienok)....Pages 197-199 Current—Voltage Characteristics of Forward-Biased p—ni—n Silicon Diodes (Yu. A. Bykovskii, K. N. Vinogradov, V. F. Elesin, V. V. Zuev)....Pages 200-203 Some Properties of a Zinc Selenide Laser (O. V. Bogdankevich, M. M. Zverev)....Pages 204-208 Electron Microprobe Study of Concentration Profiles in in GaP—GaAs and InP—InAs Diffused Heterojunctions (T. D. Dzhafarov, T. T. Dedegkaev, L. M. Dolginov)....Pages 209-211 Photoelectric Properties of InP p—n Junctions (V. V. Galavanov, R. M. Kundukhov, D. N. Nasledov, N. V. Siukaev)....Pages 212-215 Conditions for Turning on a Thyristor by Short Gate Current Pulses (A. I. Uvarov)....Pages 216-223 Thyristors with more than one Collector (I. V. Grekhov, V. B. Shuman)....Pages 224-227 p—n Junction Resistance of IMPATT Diodes at Frequencies From 0 to 10 Mc (V. L. Aronov, A. I. Mel’nikov, A. S. Tager)....Pages 228-233 Influence of Cadmium Vapor Pressure on the Diffusion of Indium in CdTe (L. V. Maslova, O. A. Matveev, Yu. V. Rud’, A. K. V. Sanin)....Pages 234-237 Radiative Recombination in Ge-Doped GaAs Diodes (C. Constantinescu, G. Popovici, P. Mihailovici, I. Petrescu)....Pages 238-241 Calculation of the Current—Voltage Characteristic for a Heterojunction Tunnel Diode (A. I. Gubanov, S. N. Dobrynin)....Pages 242-250 Experimental Study of Photodiode Response Using the Photocurrent Shot Noise Spectrum (D. V. Tarkhin, N. N. Armencha)....Pages 251-254 Self-Modulation of Microwave Oscillations Generated in Gunn Diodes (I. I. Abkevich)....Pages 255-262 Threshold Energy for Electron-Hole Pair Production by Hot Electrons in GaAs (A. A. Gutkin, É. M. Magerramov, D. N. Nasledov, V. E. Sedov)....Pages 263-267 Electrical Fluctuations in Silicon Carbide Junctions (Yu. S. Karpov, V. S. Galushko, V. Mertins)....Pages 268-270 Strain Effect in Polycrystalline Films of Indium Antimonide and Gallium Antimonide (I. I. Fal’ko)....Pages 271-274 Flux-Method Calculations of the Characteristics of Semiconductor Devices Having an Electric Field in the Base Region (I. M. Beskrovnyi)....Pages 275-283 Thermally Stimulated Currents in p-n Junctions in Gallium Phosphide (N. M. Kolchanova, R. F. Mamedova, M. A. Mirdzhalilova, D. N. Nasledov)....Pages 284-286 Alx Ga1-x As-GaAs Heterojunctions (Zh. I. Alferov, V. M. Andreev, V. I. Korol’kov, E. L. Portnoi, D. N. Tret’yakov)....Pages 287-293 Recombination Mechanisms in Photosensitive Films of the PbS Group (B. V. Izvozchikov, I. A. Taksami)....Pages 294-298 An Investigation of A Pressure-Sensitive Transistor (L. N. Syrkin, N. N. Feoktistova)....Pages 299-310 Power of the Radiation Emitted During the Tunnel Breakdown of Silicon p-n Junctions (V. G. Mel’nik)....Pages 311-313 Influence of X-Ray Radiation on Some Parameters of p-n Junctions in Silicon (O. A. Klimkova, O. R. Niyazova)....Pages 314-316 Amplification of the Photocurrent in Semiconducting Photoresistors with Neutral Contacts (G. A. Kazantsev, I. I. Taubkin)....Pages 317-320 Analysis of Processes in Multilayer Semiconductor Structures of the n-p-n-p-n-p Type (A. A. Lebedev)....Pages 321-329 Current-Voltage Characteristics of p-n-p-n Structures Governed By Recombination, Generation, and Avalanche Multiplication Processes in p-n Junctions (V. A. Kuz’min, Yu. A. Parmenov)....Pages 330-338 Overload on a Thyristor Caused by a Single Large-Amplitude Current Pulse (É. F. Burtsev, I. V. Grekhov, N. N. Kryukova, É. V. Palko, A. I. Uvarov)....Pages 339-349 New Optoelectronic Devices Made of Zinc-Compensated Silicon (B. V. Kornilov)....Pages 350-356 Investigation of Electrical and Luminescent Properties of Diffused and Epitaxial p-n Junctions in Aluminum-Doped Silicon Carbide (V. I. Pavlichenko, I. V. Ryzhikov)....Pages 357-366