Convergence of more Moore, more than Moore and beyond Moore : materials, devices, and nanosystems

Description

Cover Half Title Title Page Copyright Page Table of Contents Preface Acknowledgments Introduction Part I: From Nanoelectronics to Diversified Nanosystems Chapter 1: The Era of Sustainable and Energy Efficient Nanoelectronics and Nanosystems 1.1: Introduction 1.2: Energy and Variability Efficient Nanoelectronics 1.2.1: Moore’s Law, More than Moore, and Beyond Moore Challenges and Sustainability 1.2.2: Innovations and Trends Leading to Market Drivers 1.2.2.1: CMOS technology as a driver 1.2.2.2: Memories as market drivers and hierarchy in information processing 1.2.2.3: Pushing further the limits or introducing innovative approaches 1.2.3: Geometrical Downscaling of Logic Devices: MOSFET Electrostatic Integrity 1.2.3.1: Introduction of breakthrough modules 1.2.3.2: Opportunities for tunneling field effect transistors 1.2.4: Memory Scaling 1.2.4.1: Conventional scaling hits the limit 1.2.4.2: Nanofloating gates to help conventional NVM scaling? 1.2.4.3: Three-dimensional integration for mass storage 1.2.4.4: Alternative architectures to floating gate cells 1.2.5: Towards Zero Intrinsic Variability Through New Fabrication Paradigms 1.3: More Moore and More than Moore Co-integrated into 3D Zero Power Systems Chapter 2: From 2D to 3D Nonvolatile Memories 2.1: 2D and 3D NAND Array Architecture 2.1.1: Array Architecture 2.1.2: Cell Architecture 2.2: Scaling Limitations of 2D NAND and Transitions to 3D NAND 2.2.1: Few-Electron Effects 2.2.2: Fluctuation of the Number of Electrons (Program Noise) 2.2.3: VT Instability due to Charge Trap/Detrap 2.2.4: Cell-to-Cell Interference 2.3: Key Technology Features of 3D NAND 2.3.1: 3D NAND Architectures 2.3.2: GIDL Erase 2.3.3: Thin Polysilicon Channel 2.3.4: CMOS Under Array 2.3.5: Four Bits/Cell QLC 2.4: 3D NAND Technology Scaling 2.5: Conclusions Chapter 3: Three-Dimensional Vertical RRAM 3.1: Introduction 3.2: Architectures of 3D Vertical RRAM 3.3: Memory Cells in 3D VRRAM Architectures 3.3.1: Sneak Path Issues in 3D VRRAM 3.3.2: Self-Rectifying RRAM 3.3.3: Built-in Nonlinearity RRAM 3.3.3.1: SSC with threshold type selection layer 3.3.3.2: SSC with exponential type selection layer 3.4: Challenges for 3D VRRAM 3.5: Conclusions Chapter 4: SOI Technologies for RF and Millimeter-Wave Applications 4.1: Introduction 4.2: SOI Devices 4.2.1: Device Architecture and Electrostatics 4.2.2: A Brief History of SOI Devices 4.2.3: High-Performance RF and Millimeter-Wave PD-SOI and FD-SOI 4.2.4: Low-Power FD-SOI 4.2.5: Summary 4.3: State-of-the-Art SOI ICs 4.3.1: RF Front-End Modules: History 4.3.2: RF Front-End Modules: Future Trends 4.3.3: Summary 4.4: Silicon-Based Substrates at RF 4.4.1: From Standard Silicon to HR- and TR-SOI 4.4.2: Substrate Impact on Coplanar Technology: Measurements and Modeling Techniques 4.4.3: Quality of Integrated Passive Devices: Inductors and Filters 4.4.4: Substrate Noise Coupling: Crosstalk and Isolation 4.4.5: Substrate Linearity: Signal Distortion Induced by Silicon-Based Substrate Materials 4.4.6: Application Example: Substrate Impact on RF Switch Modules 4.4.7: Summary 4.5: Next-Generation Silicon Substrate Solutions 4.5.1: Buried PN Depletion Junction Substrates 4.5.2: Post-Process Local Porous Silicon 4.5.3: RF Performance of Buried PN and PSi Substrates 4.5.4: Summary 4.6: Conclusion Part II: Nanofunctions for Augmented Nanosystems Chapter 5: Graphene Nanoelectromechanical Switch: Ultimate Downscaled NEM Actuators to Single-Molecule and Zeptogram Mass Sensors 5.1: Introduction 5.2: Graphene 5.2.1: Graphene as a NEM Switch Material 5.2.2: Graphene as a Gas-Sensitive Material 5.2.3: Graphene Devices 5.2.3.1: Mechanical exfoliation of graphene 5.2.3.2: Epitaxial graphene technique 5.2.3.3: Chemical vapor deposition of graphene 5.3: Graphene Nanoelectromechanical Switch 5.4: Bottom-Gate Two-Terminal GNEM Switch 5.5: Top-Gate Doubly Clamped Two-Terminal GNEM Switch 5.6: Top-Gate Two-Terminal Cantilever GNEM Switch 5.7: Three-Terminal GNEM Switch with All Two-Dimensional Materials 5.8: Large-Scale Nanocrystalline GNEM Switch 5.9: GNEM Sensor for Single-Molecule Adsorption Detection 5.10: Graphene Resonator Sensor for Ultrasmall Mass Detection 5.11: Summary Chapter 6: Self-Powered 3D Nanosensor Systems for Mechanical Interfacing Applications 6.1: Application Needs for 3D Self-Powered Nanosensor Systems 6.2: Piezotronic Effect–Enabled 3D Self-Powered Tactile Nanosensor Systems 6.3: Piezophotonic Effect–Enabled 3D Self-Powered Nanosensor Systems 6.4: Contact Triboelectrification-Enabled 3D Self-Powered Active Nanosensor Systems 6.5: Conclusion and Outlook Chapter 7: Miniaturization and Packaging of Implantable Biomedical Silicon Devices 7.1: Introduction 7.2: From Titanium Box to Silicon Box 7.3: From Box Encapsulation to Thin-Film Encapsulation 7.3.1: Corrosion of Aluminum in PBS 7.3.2: Barrier Properties of SiO2 in PBS 7.3.3: Barrier Properties of Al2O3/TiO2 in PBS 7.3.4: Barrier Properties of Ti–TiN in PBS 7.3.5: Optimal Stacking as Barrier Against PBS 7.4: Biocompatibility 7.5: Conclusion Index