ENGLISH

Rad-hard Semiconductor Memories

By Cristiano Calligaro (editor) , Umberto Gatti (editor)

Book information

Publisher
River Publishers
Year
2018
ISBN
8770220204, 9788770220200
Language
english
Format
PDF
Filesize
38 MB (39632442 bytes)
Series
River Publishers Series in Electronic Materials and Devices
Pages
225\418
Time added
2021-10-20 10:51:43

Description

Rad-hard Semiconductor Memories is intended for researchers and professionals interested in: understanding how to design and make a preliminary evaluation of rad-hard semiconductor memories; making leverage on standard CMOS manufacturing processes available from different silicon foundries; and using different technology nodes. In the first part of the book, a preliminary overview of the effects of radiation in space, with a specific focus on memories, will be conducted to enable the reader to understand why specific design solutions are adopted to mitigate hard and soft errors. The second part will be devoted to RHBD (Radiation Hardening by Design) techniques for semiconductor components with a specific focus on memories. The approach will follow a top-down scheme starting from RHBD at architectural level (how to build a rad-hard floor-plan), at circuit level (how to mitigate radiation effects by handling transistors in the proper way) and at layout level (how to shape a layout to mitigate radiation effects). After the description of the mitigation techniques, the book enters in the core of the topic covering SRAMs (synchronous, asynchronous, single port and dual port) and PROMs (based on AntiFuse OTP technologies), describing how to design a rad-hard flash memory and fostering RHBD toward emerging memories like ReRAM. The last part will be a leap into emerging memories at a very early stage, not yet ready for industrial use in silicon but candidates to become an option for the next wave of rad-hard components. Dedication Contents Preface Acknowledgements List of Contributors List of Figures List of Tables List of Abbreviations 1 Space Radiation Effects in Electronics • Luigi Dilillo, Alexandre Bosser, Arto Javanainen and Ari Virtanen 2 RHBD Techniques for Memories • Cristiano Calligaro 3 Rad-hard SRAMs • Cristiano Calligaro 4 One-Time Programmable Memories for Harsh Environments • Umberto Gatti 5 Rad-hard Flash Memories • Anna Arbat Casas 6 Radiation Hardness of Foundry NVM Technologies • Evgeny Pikhay, Cristiano Calligaro and Yakov Roizin 7 Rad-hard Resistive Memories • Cristiano Calligaro 8 Technologies for Rad-hard Resistive Memories • Christian Wenger 9 New Generation of NVMs Based on Graphene-related Nanomaterials • Paolo Bondavalli Index About the Editors

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