ENGLISH

Einstein Relation in Compound Semiconductors and their Nanostructures

By Kamakhya Prasad Ghatak Dr. , Sitangshu Bhattacharya Dr. , Debashis De Dr. (auth.)

Book information

Publisher
Springer-Verlag Berlin Heidelberg
Year
2009
ISBN
978-3-540-79556-8, 978-3-540-79557-5
DOI
10.1007/978-3-540-79557-5
Language
english
Format
PDF
Filesize
10 MB (10577437 bytes)
Series
Springer Series in Materials Science 116
Edition
1
Pages
458\470
Orientation
yes
Scanned
yes
Time added
2013-08-01 04:00:00
Condensed Matter; Nanotechnology; Physics and ApplNonlinear OpticsQuantum Electronics

Description

This is the first book solely devoted to the Einstein relation in compound semiconductors and their nanostructures. The materials considered are nonlinear optical, III-V, ternary, quaternary, II-VI, IV-VI, Bismuth, stressed compounds, quantum wells, quantum wires, nipi structures, carbon nanotubes, heavily doped semiconductors, inversion layers, superlattices of nonparabolic materials with graded interfaces under magnetic quantization, quantum wire superlattices with different band structures and other field assisted systems. The influence of light on the Einstein relation in semiconductors and their nanostructures has also been investigated in detail by formulating the respective dispersion relations which control the transport in such quantum effect devices. The book deals with many open research problems.

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