ENGLISH

Ferroelectric Thin Films: Basic Properties and Device Physics for Memory Applications

By Yoshihiro Ishibashi (auth.) , Masanori Professor Okuyama , Yoshihiro Ishibashi (eds.)

Book information

Publisher
Springer-Verlag Berlin Heidelberg
Year
2005
ISBN
978-3-540-24163-8, 978-3-540-31479-0
DOI
10.1007/b99517
Language
english
Format
PDF
Filesize
10 MB (10051794 bytes)
Series
Topics in Applied Physics 98
Edition
1
Pages
244\263
Orientation
yes
Scanned
yes
Time added
2013-08-01 04:00:00
Instrumentation; Metallic Materials; Physics and AMagnetic Materials; Crystallography; Electronics aMagnetism

Description

Ferroelectric thin films continue to attract much attention due to their developing, diverse applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. All authors are acknowledged experts in the field.

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