ENGLISH

Strain-Induced Effects in Advanced MOSFETs

By Viktor Sverdlov (auth.)

Book information

Publisher
Springer-Verlag Wien
Year
2011
ISBN
978-3-7091-0381-4, 978-3-7091-0382-1
DOI
10.1007/978-3-7091-0382-1
Language
english
Format
PDF
Filesize
6 MB (6015208 bytes)
Series
Computational Microelectronics
Edition
1
Pages
252\259
Orientation
yes
Scanned
yes
Time added
2013-08-01 04:00:00
Electronics and MicroelectronicsInstrumentation

Description

Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given

Similar books