ENGLISH

Impurities Confined in Quantum Structures

By Prof. Dr. Per Olof Holtz , Dr. Qing Xiang Zhao (auth.)

Book information

Publisher
Springer-Verlag Berlin Heidelberg
Year
2004
ISBN
978-3-642-62228-1, 978-3-642-18657-8
DOI
10.1007/978-3-642-18657-8
Language
english
Format
PDF
Filesize
4 MB (3922385 bytes)
Series
Springer Series in Materials Science 77
Edition
1
Pages
139\140
Orientation
yes
Scanned
yes
Time added
2013-08-01 04:00:00
InstrumentationOptics and Electrodynamics;Optical and ElectronicOptoelectronicsPlasmonics and Optical Devices;Electronics and Mic

Description

The introduction of impurities, even in very small concentrations, in a semiconductor can change its optical and electrical properties entirely. This attribute of the semiconductor is utilized in the manifoldness of their applications. In this book, the progress on elucidating the physical properties of impurities confined in quantum structures are reviewed with an emphasis on the experimental aspects. The major results of various kinds of characterization, such as infrared spectroscopy, Raman measurements, luminescence characterization, perturbation spectroscopy and dynamical studies of the confined impurities are reviewed, but also the theoretical basis to calculate the electronic structure of the confined donors and acceptors are presented. This monograph also describes more specific aspects of the confined impurities such as the properties in the high doping regime and the effects of hydrogen passivation.

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