ENGLISH

Planar Double-Gate Transistor: From Technology to Circuit

Book information

Publisher
Springer
Year
2009
ISBN
1402093276, 9781402093272
LCC
TK7871.95 .P54 2009
Google Books ID
BEQREStM5w4C
Open Library ID
OL24059772M
Language
english
Format
PDF
Filesize
3 MB (3323178 bytes)
Edition
1
Pages
220\220
Orientation
yes
Scanned
no
Time added
2012-02-04 16:00:00

Description

This book on Double-Gates devices and circuit is unique and aims to reinforce the synergy between the research activities on CMOS sub-32nm devices and the design of elementary cells. The goal is to point out how we can take advantage of new transistor structures to come up with new basic cells and concepts that exploit the electrical features of these new devices and the breakthrough they bring. Planar Double-Gate Transistor will mainly focus on SOI CMOS transistors, fully depleted with double independent planar Gates (Independent Planar Double Gates Transistors: IPDGT), a potential candidate for the sub-32 nm technological nodes as planned by the current ITRS Roadmap.

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