Nanotechnology for Electronics, Biosensors, Additive Manufacturing and Emerging Systems Applications (Selected Topics in Electronics and Systems)

Description

Published as part of the well-established book series, Selected Topics in Electronics and Systems, this compendium features 18 peer reviewed articles focusing on high-performance materials and emerging devices for implementation in high-speed electronic systems.Wide-ranging topics span from novel materials and devices, biosensors and bio-nano-systems, artificial intelligence, robotics and emerging technologies, to applications in each of these fields.Systems for implementing data with security tokens; single chemical sensor for multi-analyte mixture detection; RF energy harvesters; additively manufactured RF devices for 5G, IoT, RFID and smart city applications are also prominently included.Written by eminent researchers, recent developments also highlight equivalent circuits models at room temperature and 4.2 K; quantum dot nonvolatile memories, 3D-confined quantum dot channel (QDC) and spatial wavefunction switched (SWS) FETs for high-speed multi-bit logic and novel system applications. Contents Preface Quantum Dot Gate (QDG) Quantum Dot Channel (QDC) Multistate Logic Non-Volatile Memory (NVM) with High-K Dielectric HfO2 Barriers 1. Introduction 2. Quantum Dot Superlattice, Minibands and Electron Tunneling Theory 3. QDG-QDC NVM Device Theory 4. Fabrication 5. Results 6. Conclusion References Comparison of Buffer Layer Grading Approaches in InGaAs/GaAs (001) 1. Introduction 2. Dislocation Dynamics Model (DTKA Model) 3. Results and Discussion 4. Conclusion References A Zagging and Weaving Model for Dislocation Interactions in Heterostructures Containing Strain Reversals 1. Introduction 2. Model for Lattice Relaxation 3. Results and Discussion 4. Conclusion References A Modeling Study of Dislocation Sidewall Gettering in II-VI and III-V Semiconductor Heterostructures 1. Introduction 2. Dislocation Dynamics Model 3. Results and Discussion 4. Conclusion References Recent Advances in the Modeling of Strain Relaxation and Dislocation Dynamics in InGaAs/GaAs (001) Heterostructures 1. Introduction 2. Dislocation Dynamics Model 3. Results and Discussion 4. Conclusion References Design of a Smart Maximum Power Point Tracker (MPPT) for RF Energy Harvester 1. Introduction 2. Configuration of the Proposed RF Energy Harvester System 3. Machine Learning Based MPPT Controller 3.1. Software Simulation 3.1.1. Data Collection and Generation 3.1.2. Feedforward Neural Network (FNN) Model 3.2. Hardware Implementation of the ML Model 4. Results and Discussion 5. Conclusion References Quantum-Dot Transistor Based Multi-Bit Multiplier Unit for In-Memory Computing I. Introduction II. Proposed Design A. Quantum-dot Transistor Memory B. Quantum-dot Transistor Based Multi-bit Multiplier Unit C. Operating Principle D. Linearity Analysis III. Evaluation A. Performance B. Statistical Analysis of Process Variations C. Power Consumption IV. Conclusion References Single Chemical Sensor for Multi-Analyte Mixture Detection and Measurement: A Review 1. Introduction 2. Voltammetry Multi-Analyte Sensor 3. Optical Multi-Analyte Sensor 4. Impedance-Metric Multi-Analyte Sensor 5. Field-Effect Transistor (FET) Multi-Analyte Sensor 6. Multi-Modular Sensor 7. Conclusion Acknowledgments References A Novel Addressing Circuit For SWS-FET Based Multivalued Dynamic Random-Access Memory Array 1. Introduction 2. Multivalued DRAM Architecture 2.1. Unit memory cell 2.2. Row/Column decoder 2.3. Sense amplifier 2.4. Timing and logic circuit 3. SWS-FET ABM Model 4. Conclusion Acknowledgments References A Novel Peripheral Circuit for SWSFET Based Multivalued Static Random-Access Memory 1. Introduction 2. System Overview 2.1. SWS-CMOS inverter-based SRAM unit cell 2.2. SWS-CMOS inverter-based SRAM cell using single two-channel access-transistor 3. Addressing and Peripheral Circuitry 3.1. SWS-FET based Row/Column decoder 3.2. C-SWSFET sense amplifier 4. ABM Model of SWSFET 5. Conclusion Acknowledgment References 3-D Confined SWS-FETs Combining Quantum Well and Quantum Dot Superlattice (QDSL) 1. Introduction 2. 2-D Confined QD-FETs 3. 3-D Confined QD-FETs 4. 2-bit Logic using QD SWS-FETs 5. Integration of QD-SWS Logic with QD-NVRAMs 6. Conclusion Acknowledgments References Systems for Implementing Data Communication with Security Tokens 1. Introduction 2. Man-In-The-Middle (MITM) Attack and the Mitigation 3. Blockchain Networks 4. Out of Band (OOB) Token Approach for Securing Communication Links 5. Control and Management Plane Operations of Security Token Exchange 6. Data Plane Operation for Secure Data Exchange 7. Summary References Compact 1-Bit Full Adder and 2-Bit SRAMs Using n-SWS-FETs 1. Introduction 2. 1-Bit Full-Adder 3. SRAM Circuit and Simulation 4. Conclusion References 3-Bit Analog-to-Digital Converter Using Multi-State Spatial Wave-Function Switched FETs 1. Introduction 2. SWS-FET Structures 3. Complementary SWS-FET 4. Quantum Simulation 5. Simulation using Analog Behavioral Model 6. SWS-FET 3-Bit Flash Analog-to-Digital Converter (ADC) Circuit 7. Conclusion Acknowledgments References Amaranthine: Humanoid Robot Kinematics Introduction Amaranthine Description A. Amaranthine Hardware Mechanism B. Amaranthine Configurations C. Amaranthine Software Mathematical Model of Amaranthine Robot: Denavit-Hartenberg (DH) Parameters Amaranthine Forward Kinematics Workspace and Path Trajectory Simulations of Amaranthine’s Arms Conclusion References Additively Manufactured RF Devices for 5G, IoT, RFID, WSN, and Smart City Applications 1. Introduction 2. Additively Manufactured Passive RF Devices 2.1. Origami-inspired tunable and deployable structures 2.2. Hybrid printed origami-inspired frequency selective surfaces 2.2.1. “Kirigami” inspired mm-wave dielectric reflectarray antenna 2.3. Inkjet printed 2.5D Lange coupler 3. Additively Manufactured Active RF Modules and Systems 3.1. Full-FM-Band, quasi-isotropic, kilometer-range energy harvester 3.1.1. Matching network using inkjet printing 3.1.2. Rectifying circuit fabricated using inkjet printing 3.2. Inkjet printed RF front ends for low-cost backscatter modules 3.2.1. Low form factor UHF backscatter front end 3.2.2. mm-Wave inkjet-printed backscatter modules for IoT applications 4. Conclusion Acknowledgment References QDC-FET and QD-SWS Physics-Based Equivalent Circuit for ABM Simulations 1. Introduction 2. Background Physics-based Equivalent Circuits 3. Physics based SWSFET Equivalent Model 4. Cadence Simulation 5. SIMULINK Simulation 6. Conclusions Acknowledgments References Modeling of Quantum Dot Channel (QDC) Si FETs at Sub-Kelvin for Multi-State Logic 1. Introduction 2. Quantum Simulation 2.1. Simulation Results 2.2. Equivalent Circuit Approach 3. Low Temperature Logic and Computing 4. Conclusion Acknowledgments References Author Index