ENGLISH

Silicon Carbide: Recent Major Advances

By F. Bechstedt , J. Furthmüller , U. Grossner , C. Raffy (auth.) , Professor Dr. W. J. Choyke , Professor Dr. H. Matsunami , Dr. G. Pensl (eds.)

Book information

Publisher
Springer-Verlag Berlin Heidelberg
Year
2004
ISBN
978-3-642-62333-2, 978-3-642-18870-1
DOI
10.1007/978-3-642-18870-1
Language
english
Format
PDF
Filesize
22 MB (23483931 bytes)
Series
Advanced Texts in Physics
Edition
1
Pages
899\909
Orientation
yes
Scanned
yes
Time added
2013-08-01 04:00:00
generalOptical and Electronic Materials;CharacterizationOptoelectronicsPlasmonics and Optical Devices;EngineeringThin Films;Condensed Matter Physics;Optics

Description

Since the 1997 publication of Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC. The book is divided into five main categories: theory, crystal growth, characterization, processing and devices. Every attempt has been made to make the articles as up-to-date as possible and assure the highest standards of accuracy. As was the case for earlier SiC books, many of the articles will be relevant a decade from now so that this book will take its place next to the earlier work as a permanent and essential reference volume.

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