ENGLISH

CMOS Past, Present and Future.

Book information

Publisher
Elsevier Science
Year
2018
ISBN
9780081021408, 0081021402
Language
english
Format
PDF
Filesize
17 MB (18304540 bytes)
Series
Woodhead Publishing series in electronic and optical materials.
Pages
353\280
Time added
2018-08-20 06:54:23

Description

Intro Title page Table of Contents Copyright Contributors Preface Acknowledgments 1: Basics of metal-oxide-semiconductor field-effect transistor (MOSFET) Abstract 1.1 Introduction 1.2 Basics of MOSFET's operation 1.3 Figures of merit of MOSFETs 1.4 Evolution of the MOSFET structure 2: Scaling and evolution of device architecture Abstract 2.1 Introduction 2.2 Dimension and architectural scaling 2.3 Lithography for downscaling 2.4 Electron-beam lithography (EBL) 2.5 Strain engineering 2.6 Impact of scaling 2.7 Beyond CMOS and beyond Si CMOS 3: Strain engineering Abstract. 7.6 Summary8: Advanced interconnect technology and reliability Abstract 8.1 Introduction 8.2 Copper interconnect integration 8.3 Low-k dielectric characteristics and classification 8.4 Copper interaction with silicon and dielectrics 8.5 Metal diffusion barriers 8.6 Reliability of copper metallization 8.7 Reliability of advanced intermetal dielectrics 8.8 Reliability statistics and failure models 8.9 The future of interconnect: beyond Cu and low-k 8.10 Summary Final words Acronyms Index.

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