Lithium Niobate-Based Heterostructures: Synthesis, Properties, and Electron Phenomena

Description

This book explores the fundamental principles of fabricating LiNbO₃-based heterostructures, examining their properties and the electron phenomena that underpin their effective use in various devices. The monograph presents a wealth of original experimental results, drawn from fifteen years of extensive research on Lithium Niobate thin films, their core properties, and applications. It serves as a valuable resource for readers across various fields of Materials Science, offering both foundational knowledge and practical insights. The first edition has garnered highly positive feedback from leading experts worldwide. Key features: Presents a comprehensive comparative analysis of existing fabrication techniques for LiNbO₃ films. Investigates in detail the structure, composition, and morphology of thin LiNbO₃ films as influenced by various deposition regimes. Thoroughly describes the structural evolution of amorphous LiNbO₃ films during the crystallization process. Provides an in-depth study and classification of electron phenomena in LiNbO₃-based heterostructures. Proposes optimal fabrication parameters for LiNbO₃-based heterostructures, ensuring their successful application. Describes oxide charge localization and evolution in LiNbO₃-based heterostructures for the first time. Includes additional material on Multifunctional Si–LiNbO₃ heterostructures for non-volatile memory units. Cover Half Title Lithium Niobate-Based Heterostructures: Synthesis, Properties, and Electron Phenomena Copyright Dedication Contents Preface Acknowledgments Author biography 1. Lithium niobate thin films: potential applications, synthesis methods, structure, and properties 1.1 The structure and main properties of bulk lithium niobate 1.2 Applications of thin LiNbO3 films 1.2.1 Waveguide-based optical devices 1.2.2 Surface acoustic wave devices 1.2.3 Memory units and neuromorphic systems 1.3 Fabrication methods of thin LiNbO3 films 1.3.1 Liquid-phase epitaxy 1.3.2 Chemical vapor deposition 1.3.3 Sol–gel process 1.3.4 Pulsed laser deposition 1.3.5 Radio-frequency magnetron sputtering 1.4 Fundamentals and critical parameters of the RFMS method and the ion-beam sputtering method 1.5 Electrical properties and charge transport phenomena in LiNbO3-based heterostructures 1.5.1 Charge carriers in LiNbO3 1.5.2 Electrical conductivity limited by contact phenomena 1.5.3 Electrical conductivity limited by bulk properties 1.6 Major application-focused challenges in the synthesis of thin LiNbO3 films 1.6.1 Synthesis of epitaxial LN films with low mechanical stress 1.6.2 Ferroelectric properties and polarization reversal 1.6.3 Defect concentration and performance of thin LN films 1.7 Summary and discussion References 2. Synthesis, structure, and surface morphology of LiNbO3 films 2.1 Technological regimes for the synthesis of thin LiNbO3 films by radio-frequency magnetron sputtering and ion-beam sputtering methods 2.2 Direct growth of polycrystalline LiNbO3 films 2.2.1 Films deposited by RFMS 2.2.2 Films deposited by ion-beam sputtering 2.3 Influence of the synthesis regime and subsequent annealing on the composition and structural properties of LiNbO3 films 2.3.1 Plasma effect 2.3.2 Effect of reactive gas pressure 2.3.3 Effect of substrate type 2.3.4 Effect of oxygen presence in the gas reaction environment 2.3.5 Effect of thermal annealing 2.3.6 Early stages of lithium niobate film growth 2.3.7 Crystallization of amorphous Li–Nb–O films 2.4 Summary and discussion References 3. Electron phenomena in LiNbO3-based heterostructures 3.1 Basic electrical properties of LiNbO3 thin films in Si–LiNbO3 heterostructures 3.1.1 Capacitance–voltage and current–voltage characteristics of LiNbO3-based heterostructures 3.1.2 Ferroelectric properties of LiNbO3 thin films 3.2 Conduction mechanisms in (001)Si–LiNbO3 heterostructures 3.2.1 Region of average electric fields in the temperature interval of T = 90–140 K 3.2.2 Region of average electric fields in the temperature range of T = 140–300 K 3.2.3 Region of high electric fields 3.3 Band diagram of the Si–LiNbO3 heterostructures 3.4 Impedance spectroscopy and AC conductivity of thin LiNbO3 films 3.5 Summary and discussion References 4. Effect of sputtering conditions and post-growth treatment on electron phenomena in Si–LiNbO3 heterostructures 4.1 Effects of spatial plasma inhomogeneity and composition and the relative target–substrate position 4.1.1 Capacitance–voltage characteristics and ferroelectric properties of Si–LiNbO3–Al heterostructures 4.1.2 Current–voltage characteristics of Si–LiNbO3–Al heterostructures 4.1.3 Impedance spectroscopy and AC conductivity of Si–LiNbO3–Al heterostructures 4.2 Thermal annealing effect on electrical properties of Si–LiNbO3 heterostructures 4.2.1 Capacitance–voltage characteristics and ferroelectric properties of Si–LiNbO3–Al heterostructures 4.2.2 Current–voltage characteristics of Si–LiNbO3–Al heterostructures 4.3 Impedance spectroscopy of Si–LiNbO3–Al heterostructures after thermal annealing 4.4 Optical bandgap of thin LiNbO3 films produced by different fabrication regimes 4.4.1 Dependence of the optical bandgap shift in thin LiNbO3 films on RFMS conditions and subsequent thermal annealing 4.4.2 Effect of pulsed photon treatment on the optical bandgap of LiNbO3 films 4.5 Temperature-induced transition from p-type to n-type conduction in LiNbO3/Nb2O5 polycrystalline films 4.6 Summary and discussion References 5. Oxide charge: localization, evolution, and related phenomena at heterojunctions 5.1 Electrical properties and crystallization of amorphous Li–Nb–O films on silicon 5.2 Evolution of oxide charge during the crystallization of amorphous Li–Nb–O films 5.3 Transport properties and crystallization of Li–Nb–O films 5.4 Charge phenomena at Si–LiNbO3 heterojunctions 5.5 Charge phenomena in NiSi2–LiNbO3 heterostructures 5.6 Summary and discussion References 6. Bonus chapter: multifunctional Si–LiNbO3 heterostructures for nonvolatile memory units References Appendix A References