2D Materials: Properties and Devices

Description

Learn about the most recent advances in 2D materials with this comprehensive and accessible text. Providing all the necessary materials science and physics background, leading experts discuss the fundamental properties of a wide range of 2D materials, and their potential applications in electronic, optoelectronic and photonic devices. Several important classes of materials are covered, from more established ones such as graphene, hexagonal boron nitride, and transition metal dichalcogenides, to new and emerging materials such as black phosphorus, silicene, and germanene. Readers will gain an in-depth understanding of the electronic structure and optical, thermal, mechanical, vibrational, spin and plasmonic properties of each material, as well as the different techniques that can be used for their synthesis. Presenting a unified perspective on 2D materials, this is an excellent resource for graduate students, researchers and practitioners working in nanotechnology, nanoelectronics, nanophotonics, condensed matter physics, and chemistry. Contents......Page 5 Contributors......Page 12 Introduction......Page 18 Part I......Page 22 1.1 Chemical Bonding and Ground-State Structure......Page 24 1.2 Thermal (In)Stability of 2D Crystals......Page 26 1.3 Electronic Structure of Single-Layer Graphene......Page 28 1.4 Electronic Structure of Bilayer Graphene......Page 34 1.5 Graphene as a Bridge between Condensed Matter and High-Energy Physics......Page 37 1.6 References......Page 38 2.1 Boltzmann Transport Theory......Page 42 2.2 Charged Impurities......Page 45 2.3 Resonant Scatterers......Page 48 2.4 Corrugations of the Graphene Sheet......Page 50 2.5 Phonons......Page 51 2.6 References......Page 53 3 Optical Properties of Graphene......Page 55 3.1 Tunable Interband and Intraband Transitions in Electrically Gated Graphene......Page 56 3.2 Landau Level Transitions in Graphene under a Magnetic Field......Page 60 3.3 Plasmon Excitations in Graphene......Page 61 3.4 Bilayer and Multilayer Graphene......Page 63 3.5 References......Page 65 4.1 Introduction......Page 69 4.2 Experiments......Page 70 4.3 Non-linear and Anisotropic Response of Graphene......Page 74 4.4 Experimental Validation......Page 78 4.5 Instabilities......Page 80 4.6 Defective Graphene......Page 81 4.8 References......Page 85 5.1 Structure and Vibrations of Monolayer Graphene......Page 88 5.2 Many-Layers Graphene and the Interlayer Vibrations in 2D Systems......Page 91 5.3 The Quantum Nature of Atomic Vibrations......Page 94 5.5 Probing Phonons Near Defects and Edges/Grain Boundaries......Page 96 5.6 References......Page 100 6.1 Thermal Conductivity of Graphene and Few-Layer Graphene......Page 107 6.2 Isotope and Rotational Engineering of Thermal Properties of Graphene......Page 110 6.3 Graphene Applications in Thermal Management Technologies......Page 113 6.4 Conclusions......Page 117 6.5 References......Page 118 7.1 Macroscopic Approach to Graphene Plasmonics......Page 121 7.2 Microscopic Approach......Page 128 7.3 Plasmon Damping......Page 132 7.4 Experimental Observation of Graphene Plasmons......Page 134 7.5 Applications......Page 151 7.6 References......Page 153 8.1 Introduction......Page 158 8.2 Basic Electrical Properties of p–n Junctions......Page 159 8.3 Photon Analogies for Carriers in Graphene......Page 165 8.4 Future Directions......Page 173 8.5 References......Page 174 9.1 Introduction......Page 176 9.2 Graphene RF Transistors and Circuits......Page 177 9.3 Graphene Nanostructures......Page 183 9.4 Bilayer Graphene Transistors......Page 186 9.5 Vertical Graphene Transistors......Page 188 9.6 Conclusion......Page 191 9.7 References......Page 192 10.1 Introduction......Page 197 10.2 Light to Current Conversion......Page 198 10.3 Photodetectors......Page 201 10.4 Light Modulators......Page 204 10.5 Ultra-Fast Lasers......Page 206 10.6 Thermal Radiation Sources......Page 208 10.7 Passive Optical Elements......Page 209 10.8 Transparent Conductive Electrodes......Page 210 10.9 References......Page 211 11.1 Introduction to Spintronics......Page 214 11.2 Advantages of Graphene for Spintronics......Page 215 11.3 How to Measure Spin Lifetimes in Graphene and 2D Materials......Page 217 11.4 New Spin Relaxation Mechanisms......Page 223 11.5 Proximity Effects and Spin Gating......Page 229 11.6 References......Page 232 12.1 Introduction......Page 236 12.2 Mechanical Assembly of Graphene–BN Heterostructures......Page 237 12.3 High-Performance Graphene......Page 242 12.4 Beyond Graphene......Page 249 12.5 References......Page 250 13.1 Introduction......Page 255 13.2 CVD Method for Graphene Growth......Page 256 13.3 Prospects......Page 267 13.4 References......Page 268 Part II......Page 274 14.1 Introduction......Page 276 14.2 Electronic Structure......Page 277 14.3 From Density Functional Theory to Tight-Binding Approximation......Page 281 14.4 Including Strain in the Tight-Binding Hamiltonian......Page 285 14.5 Low-Energy Model of Strained Transition Metal Dichalcogenides......Page 287 14.6 Strain Engineering in Transition Metal Dichalcogenides......Page 289 14.7 References......Page 293 15.1 Introduction......Page 296 15.2 Electronic Structure at the Band Edges......Page 297 15.3 Valley-Spin Physics in Monolayers......Page 300 15.4 Valley and Spin Physics in Bilayers......Page 306 15.5 References......Page 309 16.1 Introduction......Page 312 16.2 Ballistic Transport Simulations......Page 314 16.3 Scattering Mechanisms......Page 316 16.4 Point Defects......Page 320 16.5 References......Page 325 17.1 Fundamentals of 2D TMD Heterostructures......Page 327 17.2 Interlayer Exciton Properties......Page 332 17.3 Valley Optoelectronic Properties of 2D Heterostructure......Page 336 17.4 Outlook......Page 342 17.5 References......Page 343 18.1 Introduction......Page 346 18.2 Light-Emitting Diodes and Lasers......Page 347 18.3 Photovoltaic Devices......Page 350 18.4 Photodetectors......Page 353 18.5 Valley-Dependent Optoelectronic Devices......Page 357 18.6 References......Page 359 19.1 Introduction......Page 361 19.3 Sulfurization/Selenization of Transition Metal Oxides......Page 362 19.5 Physical Vapor Phase Transport......Page 368 19.7 References......Page 371 20.1 Introduction......Page 376 20.2 Point Defects......Page 377 20.3 Topological Defects: Dislocations and Grain Boundaries......Page 380 20.4 Dislocations in Bilayer Materials......Page 387 20.5 Other 1D Defects – Edges, Interfaces, and Nanowires......Page 389 20.6 Summary......Page 392 20.7 References......Page 393 Part III......Page 396 21.1 Crystal and Electronic Band Structures......Page 398 21.2 Electronic Properties......Page 406 21.3 Optical Properties......Page 409 21.4 Thermal Properties......Page 416 21.5 Mechanical Properties – Elasticity......Page 422 21.7 References......Page 425 22 Anisotropic Properties of Black Phosphorus......Page 430 22.1 Synthesis of Black Phosphorus......Page 431 22.2 Anisotropic Response of Black Phosphorus......Page 433 22.4 References......Page 446 23.2 Optical Properties......Page 452 23.3 Optoelectronic Devices......Page 459 23.4 Outlook and Remarks......Page 467 23.5 References......Page 469 24.2 The Advent of Silicene......Page 475 24.3 Epitaxial Silicene......Page 476 24.4 Electronic Structure of Silicene......Page 479 24.5 Functionalization of Silicene......Page 480 24.6 Multilayer Silicene......Page 482 24.7 Germanene and Stanene......Page 484 24.9 References......Page 486 25.1 Motivation and Methodology......Page 489 25.2 Group IV Elements: Silicene, Germanene......Page 491 25.3 Group III–V and II–VI Compounds......Page 495 25.4 Group V Elements: Nitrogene and Antimonene......Page 497 25.5 Transition Metal Oxides and Dichalcogenides......Page 498 25.7 References......Page 499 Index......Page 502