ENGLISH

Strain Effect in Semiconductors: Theory and Device Applications

Book information

Publisher
Springer US
Year
2010
ISBN
978-1-4419-0551-2, 978-1-4419-0552-9
DOI
10.1007/978-1-4419-0552-9
Language
english
Format
PDF
Filesize
10 MB (10271087 bytes)
Edition
1
Pages
350\346
Orientation
yes
Scanned
yes
Time added
2013-08-01 04:00:00

Description

Strain Effect in Semiconductors: Theory and Device Applications presents the fundamentals and applications of strain in semiconductors and semiconductor devices that is relevant for strain-enhanced advanced CMOS technology and strain-based piezoresistive MEMS transducers. The book discusses relevant applications of strain while also focusing on the fundamental physics as they pertain to bulk, planar, and scaled nano-devices. Lead authors Yongke Sun, Scott Thompson and Toshikazu Nishida also: Treat strain physics at both the qualitative overview level as well as provide detailed fundamentalsExplain strain physics relevant to logic devices as well as strain-based MEMS This book is relevant to current strained Si logic technology, as well as for understanding the physics and scaling of future strain nano-scale devices. It is perfect for practicing device engineers at semiconductor manufacturers, as well as graduate students studying device physics at universities.

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