ENGLISH

Extreme Statistics in Nanoscale Memory Design

By Amith Singhee (auth.) , Amith Singhee , Rob A. Rutenbar (eds.)

Book information

Publisher
Springer US
Year
2010
ISBN
1441966056, 9781441966056
DOI
10.1007/978-1-4419-6606-3
Language
english
Format
PDF
Filesize
4 MB (4297240 bytes)
Series
Integrated Circuits and Systems
Edition
1
Pages
246\257
Time added
2011-06-04 13:46:07
Circuits and Systems; Electronics and MicroelectroInstrumentation

Description

Extreme Statistics in Nanoscale Memory Design brings together some of the world’s leading experts in statistical EDA, memory design, device variability modeling and reliability modeling, to compile theoretical and practical results in one complete reference on statistical techniques for extreme statistics in nanoscale memories. The work covers a variety of techniques, including statistical, deterministic, model-based and non-parametric methods, along with relevant description of the sources of variations and their impact on devices and memory design. Specifically, the authors cover methods from extreme value theory, Monte Carlo simulation, reliability modeling, direct memory margin computation and hypervolume computation. Ideas are also presented both from the perspective of an EDA practitioner and a memory designer to provide a comprehensive understanding of the state-of -the-art in the area of extreme statistics estimation and statistical memory design. Extreme Statistics in Nanoscale Memory Design is a useful reference on statistical design of integrated circuits for researchers, engineers and professionals.

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