ENGLISH

The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices

By Zhiqiang Li (auth.)

Book information

Publisher
Springer-Verlag Berlin Heidelberg
Year
2016
ISBN
978-3-662-49681-7, 978-3-662-49683-1
DOI
10.1007/978-3-662-49683-1
Language
english
Format
PDF
Filesize
4 MB (3983422 bytes)
Series
Springer Theses
Edition
1
Pages
XIV, 59\71
Time added
2016-11-20 09:00:00
Semiconductors;Electronic Circuits and Devices;Nan

Description

This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600℃ and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10−7Ω•cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.

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