ENGLISH

Low Power and Reliable SRAM Memory Cell and Array Design

By Koichiro Ishibashi (auth.) , Koichiro Ishibashi , Kenichi Osada (eds.)

Book information

Publisher
Springer-Verlag Berlin Heidelberg
Year
2011
ISBN
3642195679, 9783642195679
DOI
10.1007/978-3-642-19568-6
ISSN
1437-0387
Google Books ID
48ecSZI88BIC
Language
english
Format
PDF
Filesize
2 MB (2555656 bytes)
Series
Springer Series in Advanced Microelectronics 31
Edition
1
Pages
144\156
Orientation
yes
Scanned
no
Time added
2012-02-14 18:00:00
Electronics and MicroelectronicsgeneralInstrumentation; Engineering

Description

Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.

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