ENGLISH

Silicon-Based Millimeter-Wave Devices

By P. Russer , E. Biebl (auth.) , Dr.-Ing. Johann-Friedrich Luy , Professor Dr. techn. Peter Russer (eds.)

Book information

Publisher
Springer-Verlag Berlin Heidelberg
Year
1994
ISBN
978-3-642-79033-1, 978-3-642-79031-7
DOI
10.1007/978-3-642-79031-7
Language
english
Format
PDF
Filesize
11 MB (11073887 bytes)
Series
Springer Series in Electronics and Photonics 32
Edition
1
Pages
343\358
Orientation
yes
Scanned
yes
Time added
2013-08-01 04:00:00
InstrumentationNetworks; Electronics and MicroelectronicsOptical and Electronic Materials; Communications E

Description

Silicon-Based Millimeter-Wave Devices describes field-theoretical methods for the design and analysis of planar waveguide structures and antennas. The principles and limitations of transit-time devices with different injection mechanisms are discussed, as are aspects of fabrication and characterization. The physical properties of silicon Schottky contacts and diodes are treated in a separate chapter. Two chapters cover the silicon/germanium devices: physics and RF properties of the heterobipolar transistor and quantum effect devices such as the resonant tunneling element are described. The integration of devices in monolithic circuits is explained and advanced technologies are presented along with the self-mixing oscillator operation. Finally sensor and system applications are considered.

Similar books