An Introduction to Ultra-Fast Silicon Detectors

Description

The book describes the development of innovative silicon sensors known as ultra-fast silicon detectors for use in the space-time tracking of charge particles. The first comprehensive collection of information on the topic, otherwise currently scattered in existing literature, this book presents a comprehensive introduction to the development of ultra-fast silicon detectors with the latest technology and applications from the field. It will be an ideal reference for graduate and postgraduates studying high energy and particle physics and engineering, in addition to researchers in the area. Key features Authored by a team of subject area specialists, whose research group first invented ultra-fast silicon detectors The first book on the topic to explain the details of the design of silicon sensors for 4-dimensional tracking Presents state-of-the-art results, and prospects for further performance evolutions The Open Access version of this book, available at www.taylorfrancis.com/e/9780367646295 , has been made available under a Creative Commons Attribution-Non Commercial-No Derivatives 4.0 license. Cover Half Title Series Page Title Page Copyright Page Contents Preface Acknowledgements Chapter 1: Operating Principles of Silicon Sensors 1.1. Energy deposition in silicon 1.1.1. a particles 1.2. Signal formation in silicon sensor: Shockley-Ramo’s theorem 1.3. Radiation damage in silicon sensors 1.3.1. Impact of defects on the properties of silicon sensors 1.3.2. Acceptor removal Chapter 2: Ultra-Fast Silicon Detectors 2.1. Low-Gain Avalanche Diode technology 2.1.1. Charge multiplication 2.1.2. Optimization of the LGAD design for timing application: the Ultra-Fast Silicon Detector project 2.2. The Weightfield2 simulation program 2.3. UFSD signal formation 2.4. UFSD noise sources 2.5. Time-Tagging Detector 2.5.1. Jitter 2.5.2. Ionization 2.5.3. Signal distortion 2.5.4. TDC 2.6. UFSD read-out electronic 2.6.1. Time walk correction 2.7. UFSD temporal resolution 2.8. Building blocks of multi-pads UFSD 2.9. Radiation effects on UFSD 2.9.1. Increased leakage current: power consumption and shot noise 2.9.2. Variation in doping concentration: loss of gain and higher depletion voltage 2.9.3. Charge trapping on the UFSD signal shape 2.10. Gain recovery in irradiated UFSD 2.11. Additional LGAD designs 2.11.1. Double-sided LGAD design 2.11.2. n-in-p vs p-in-n LGAD design Chapter 3: Numerical Modelling and Simulation 3.1. Introduction 3.2. Physical modelling of semiconductor devices 3.2.1. Electromagnetic model: the Poisson’s equation 3.2.2. Transport models 3.3. Numerical treatment of models 3.3.1. Methods of spatial discretization 3.3.2. The iterative solution of the equations 3.4. UFSD implementation and modelling 3.4.1. Generation-recombination mechanisms 3.4.2. Radiation damage modelling 3.4.3. Other physical models 3.5. Simulating Ultra-Fast Silicon Detectors 3.5.1. Static characteristics and electric field 3.5.2. Transient processes 3.6. Resistive AC-Coupled Silicon Detectors design Chapter 4: Experimental Techniques 4.1. Static characterization of UFSD sensors 4.1.1. Current-voltage measurement 4.1.2. Capacitance-voltage measurement 4.1.3. Multi-pad sensors test 4.2. CCD-camera setup 4.3. Transient Current Technique system 4.4. The b-source setup 4.5. UFSDs read-out electronic boards Chapter 5: Characterization of UFSDs 5.1. Gain layer characterization 5.1.1. Gain layer design 5.1.2. Impact of the gain layer design on performances 5.1.3. Carbonated gain implant 5.1.4. The effects of temperature on the gain layer performances 5.2. The inter-pad region 5.2.1. Trench-Isolated LGADs 5.2.2. Measurement of the no-gain distance 5.2.3. Effects of the p-stop implant design on UFSD performances 5.2.4. Resistive AC-Coupled Silicon Detectors (RSD) 5.2.5. Summary of inter-pad designs 5.3. Temporal resolution 5.4. Yield and uniformity of a large UFSD productionPRODUCTION 5.4.1. Yield and leakage current uniformity 5.4.2. Gain uniformity Chapter 6: Characterization of Irradiated UFSDs 6.1. Irradiation campaigns and handling of irradiated sensors 6.2. Study of the acceptor removal mechanism 6.2.1. Determination of VGL in irradiated UFSDs 6.2.2. ACCEPTOR REMOVAL DUE TO NEUTRONS OR PROTONS 6.3. Acceptor removal due to neutrons or protons irradiation 6.4. Gain, noise, and temporal resolution of irradiated UFSD sensors 6.4.1. WF2 gain simulation of irradiated UFSDs 6.4.2. Temporal resolution 6.4.3. UFSDs noise 6.4.4. UFSDs non-uniform irradiation Chapter 7: Sensors for Extreme Fluences 7.1. The regime of extreme fluences 7.2. Sensor design 7.2.1. Substrate choice 7.2.2. The gain layer region 7.2.3. The sensors periphery 7.2.4. The inter-pad region 7.3. Simulation of extremely irradiated sensors Appendix A: Productions A.1. Fondazione Bruno Kessler A.1.1. UFSD1 A.1.2. UFSD2 A.1.3. UFSD3 A.1.4. UFSD3.1 A.1.5. Trench-Isolated-LGAD A.1.6. RSD1 A.1.7. UFSD3.2 A.2. Centro Nacional de Microelectronica A.2.1. Run 12916 (CNM1) A.3. Hamamatsu Photonics A.3.1. ECX20840 A.3.2. EXX28995 (HPK1) A.3.3. EXX30327-EXX30328-EDX30329 A.3.4. HPK2 Acronyms References Index