ENGLISH

Emerging Resistive Switching Memories

By Jianyong Ouyang (auth.)

Book information

Publisher
Springer International Publishing
Year
2016
ISBN
978-3-319-31570-6, 978-3-319-31572-0
DOI
10.1007/978-3-319-31572-0
Language
english
Format
PDF
Filesize
6 MB (6198004 bytes)
Series
SpringerBriefs in Materials
Edition
1
Pages
VIII, 93\101
Time added
2016-07-20 04:00:00
Instrumentation; Memory StructuresNanotechnology; Electronic Circuits and Devices; E

Description

This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental properties of the technology. He details how charge trapping, charge transfer and conductive filament formation effect resistive switching memory devices.

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